RN739FT106 Discrete Semiconductor Products

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The RN739FT106 is a bi-directional, low capacitance, high-speed silicon epitaxial Schottky diode manufactured by Rohm Semiconductor. This product is ideal for RF applications such as in-phase/quadrature mixing, high-speed switching, and matching applications. This diode is packaged in an industry standard SOT-23 package.

The RN739FT106 diodes have electrical characteristics that are optimized for use in high-frequency, high-input impedance applications. Specifically, this product has a wide operating temperature range of -55 to 150°C, a forward voltage drop of 0.5 V ± 15 mV, and a reverse leakage current of ≤ 0.5 μA. Furthermore, the extremely low capacitance of no more than 2 pF makes these diode ideal for high-frequency matching and switching applications. The highly accurate switching characteristics of this diode also allow for improved linearity performance when used in high-speed, high-speed applications.

The working principle of the RN739FT106 involves the voltage passing through the diode\'s junction and creating a small barrier at the point of contact between the two terminals. This barrier creates a resistance that limits the flow of the current. When the applied voltage is greater than the barrier voltage, the current will flow in the forward direction. However, when the applied voltage is decreased, the current flow will be reversed and the current will be drawn in the opposite direction.

These diodes are used in a wide range of high-speed and high-efficiency applications, such as in-phase/quadrature mixing, RF input matching, low-loss switching, low-noise oscillators, high-speed amplifiers, filters, and switches. Due to its low capacitance, the RN739FT106 is especially suitable for interface circuits, high-frequency rectification, and high-voltage transient prevention applications.

In conclusion, the RN739FT106 from Rohm Semiconductor is a versatile and reliable bi-directional, low capacitance, high-speed silicon epitaxial Schottky diode designed for RF applications. Its low capacitance and highly accurate switching characteristics make it an ideal choice for use in high-speed applications, in-phase/quadrature mixing, and RF input matching.

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