| Allicdata Part #: | RS3DR7G-ND |
| Manufacturer Part#: |
RS3D R7G |
| Price: | $ 0.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 200V 3A DO214AB |
| More Detail: | Diode Standard 200V 3A Surface Mount DO-214AB (SMC... |
| DataSheet: | RS3D R7G Datasheet/PDF |
| Quantity: | 1000 |
| 3400 +: | $ 0.08295 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 150ns |
| Current - Reverse Leakage @ Vr: | 10µA @ 200V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AB, SMC |
| Supplier Device Package: | DO-214AB (SMC) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RS3D R7G is a component of electronic diodes that converts electrical energy into a single wavelength of light. It is a rectifier, which means one part of its component serves to limit the flow of electricity by allowing certain electrons to pass freely through it while the other side of the component blocks the rest of the electrical current. The RS3D R7G operates under a principle known as avalanche breakdown, and is also commonly referred to as a Shockley diode. This article will discuss the application and working principles of the RS3D R7G diode rectifier. In terms of its application, the RS3D R7G diode rectifier is primarily used for power switch applications in a variety of applications such as automotive, industrial, and consumer electronics. These application fields require both high power and quick switching time. As a rectifier, the RS3D R7G has the ability to regulate the amount of power transferred from a power source to an application. It\'s also highly efficient, as it can reduce energy loss as well as increase energy efficiency. Additionally, the diode rectifier can reduce electromagnetic interference (EMI), which is an additional benefit for automotive and industrial applications. In terms of the working principles of the RS3D R7G diode rectifier, it operates on the basis of avalanche breakdown. This occurs when the voltage applied to the diode exceeds the breakdown voltage, which is the voltage at which the diode begins to break down and allow the current to flow. When the voltage exceeds the breakdown voltage, electrons in the junction of the direction are accelerated; when they collide with other electrons, they create electron-hole pairs that travel in opposite directions through the junction. This results in the current flow that is desired for the application.The process of avalanche breakdown is controlled by the doping of the diode junction, which affects the total amount of current that can safely flow through the diode. The amount of dopant used in the diode is determined by the application and the required current load. Additionally, the technologic advances of Schottky barrier transistors have further improved the performance of the RS3D R7G rectifier, by enabling faster switching times. Overall, the RS3D R7G diode rectifier is a powerful component used in a variety of applications with the ability to switch quickly and efficiently. Through its ability to regulate the amount of power transferred to and required by an application, it is highly useful for both automotive, industrial, and consumer electronics. Its operational principles, based on avalanche breakdown and controlled by the doping of the diode junction, also contribute to its effectiveness.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "RS3D" Included word is 18
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RS3D-E3/9AT | Vishay Semic... | 0.17 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3DHE3_A/H | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3DB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
| RS3DHE3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3D-E3/57T | Vishay Semic... | 0.23 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3D-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 3A SM... |
| RS3DHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3D-M3/9AT | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3D V6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3D-M3/57T | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3DHR7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3DHE3_A/I | Vishay Semic... | 0.17 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3DHM6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3D R7G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3DB-13-F | Diodes Incor... | -- | 6000 | DIODE GEN PURP 200V 3A SM... |
| RS3D M6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3D V7G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| RS3D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
Latest Products
IDW30E65D1
Diodes - General Purpose, Power, Switchi...
PMEG4005AEA/M5X
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
RGP10J-057M3/54
DIODE GEN PURPOSE DO-204ALDiode
1N4004-N-2-2-BP
DIODE GEN PURP 400V 1A DO41Diode Standar...
CPD76X-1N5817-CT
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
JANTXV1N6662US
DIODE GEN PURP 400V 500MA D5ADiode Stand...
RS3D R7G Datasheet/PDF