RS3J V7G Discrete Semiconductor Products |
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Allicdata Part #: | RS3JV7GTR-ND |
Manufacturer Part#: |
RS3J V7G |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 3A DO214AB |
More Detail: | Diode Standard 600V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | RS3J V7G Datasheet/PDF |
Quantity: | 1700 |
850 +: | $ 0.08256 |
1700 +: | $ 0.07430 |
2550 +: | $ 0.06811 |
5950 +: | $ 0.06398 |
21250 +: | $ 0.05985 |
42500 +: | $ 0.05504 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 250ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The RS3J V7G is a rectifier diode belonging to the RS3 family of rectifiers. Designed to meet the needs of applications requiring high-reliability, the RS3J V7G is suitable for use in a wide variety of both industrial and consumer applications. Its rugged construction, wide operating temperature range, and high surge current ratings make it particularly well-suited for use in automotive, telecommunications, and power conversion applications.
The RS3J V7G is an economical solution for applications requiring a fast, low-cost rectifier diode. The monolithic component is fabricated using high-quality, high-efficiency semiconductor materials. Its low-profile construction and wide operating temperature range of -55 to +125°C allow it to function reliably in a variety of industrial and consumer applications. Its high surge current ratings make it ideal for automotive, telecommunications, and power conversion applications.
The rectifier diode is formed by a p-n junction, which is formed by a semiconductor material. A P-type or N-type material is used, depending on the component\'s design. The silicon material used for the RS3J V7G has a low forward voltage drop, a low reverse leakage current, and a high surge current rating. The component is optimized for use with both AC and DC applications, providing for consistent performance.
The RS3J V7G is designed for use in a variety of applications. It can be used as an efficient and reliable rectifier for low-current AC/DC converters, switching power supply circuits, and linear power supplies. The component is particularly well-suited for applications requiring high reliability, such as mission-critical, aerospace, and military applications. Its low-profile construction makes it suitable for high-density, space-saving circuit designs.
The operating principles behind the RS3J V7G are straightforward. The component has two leads: the anode and the cathode. When forward-biased, the anode is connected to a positive voltage, and the cathode is connected to a negative voltage. The resulting current flows from the anode to the cathode, allowing the rectifier diode to function as a one-way gate. In reverse-biased conditions, the component operates as an open circuit and blocks any current flow.
The RS3J V7G rectifier diode is an economical and reliable component, designed for use in a variety of applications. Its low-profile construction, wide operating temperature range, and high surge current ratings make it particularly well-suited for use in automotive, telecommunications, and power conversion applications. Its reliable performance and long operating life ensure that it is an ideal choice for applications requiring high reliability. Whether employed in an AC-DC converter, power supply circuit, or linear power supply, the RS3J V7G rectifier diode is a reliable and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RS3J-13-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 600V 3A SM... |
RS3J R7G | Taiwan Semic... | 0.09 $ | 2550 | DIODE GEN PURP 600V 3A DO... |
RS3J V7G | Taiwan Semic... | 0.09 $ | 1700 | DIODE GEN PURP 600V 3A DO... |
RS3J-E3/9AT | Vishay Semic... | 0.16 $ | 3500 | DIODE GEN PURP 600V 3A DO... |
RS3J-E3/57T | Vishay Semic... | -- | 3400 | DIODE GEN PURP 600V 3A DO... |
RS3JHE3_A/I | Vishay Semic... | 0.17 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3JHE3_A/H | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3JB-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 3A SM... |
RS3J M6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3J V6G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3JHM6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3JHR7G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3J-M3/57T | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3J-M3/9AT | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3JHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3JHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
RS3J-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A SM... |
RS3JB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A SM... |
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