RS3MB-13

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The RS3MB-13 is an epitaxial planar Schottky type rectifier diode. It consists of a silicon substrate, an aluminum implanted contact layer, a passivated barrier layer, and an anode and cathode terminal. It is available in 3 versions: SOT-323, SOT-89, SOT-143.

The RS3MB-13 has a very low forward voltage drop. This provides the benefit of increased power efficiency. The maximum forward current is 3A, meaning it can handle high current demands. The maximum reverse voltage is 13V, meaning it can also handle high voltages. The device has a small form factor and is RoHS compliant.

The RS3MB-13 is especially suited for use in DC-to-DC converters, battery chargers, voltage regulator modules, load switches, and other applications that require high efficiency and low forward drop.

The working principle of the RS3MB-13 is the same as that of any other rectifier diode. It is based on the P-N junction. It consists of two layers of material separated by a thin dielectric spacer. When a voltage is applied across the junction, the electric field between the two layers breaks down the separation so that electrons can flow from the P-type layer to the N-type layer.

The electrons flow from the N-type layer to the P-type layer, forming a current flow across the junction. This produces the electrical power that is then converted into useful DC power. The RS3MB-13 has a reverse recovery time, meaning that it will start conducting again after a period of time when the forward voltage is removed, giving it additional flexibility compared to other rectifier diodes.

The RS3MB-13 is designed to meet the needs of high current and voltage applications with improved power efficiency. It is ideal for applications such as DC-to-DC converters, battery chargers, voltage regulator modules, load switches, and other applications that require high efficiency and low forward drop. It is RoHS compliant and available in 3 different packaging formats.

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