RSB16F2T106 Circuit Protection

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RSB16F2T106 is a TVS - Diodes device typically used to protect against overvoltage transients, surges, spikes, and ESD. This device is the perfect solution for sensitive electronics and offers superior ESD protection for diverse applications such as automotive, industrial, home electronics, communication systems, PCs, peripherals, and more.

The RSB16F2T106 is an unidirectional, multilayer, silicon breakdown protection device that provides a clamping action on transient voltage surges. The device is composed of three layers of silicon (PNP, N-Channel, and P-Channel) that shift to clamp the excess voltage, while also providing a low on-state resistance. The device limits the overvoltage exposure of a system\'s sensitive components to help ensure a long system life.

In terms of application fields, TVS - Diodes’ RSB16F2T106 is primarily intended for applications where overvoltage protection and ESD prevention are key components, such as on automotive data buses and control circuits, industrial systems, communication systems, PCs, and other consumer electronics. This TVS-Diode device is particularly beneficial in terms of its low on-state resistance and high surge handling capabilities, making it a great choice for applications where perhaps only one type of protection device can work effectively.

RSB16F2T106 employs the Avalanche-Voltage Principle, and displays a three-layer silicon structure, often referred to as a ‘V’-structure. The V-structure employed by this device ensures flexibility for responding to transient voltage events of varying amplitudes and durations. With fast response to high frequency events, the RSB16F2T106 provides maximum transient protection with an extremely low reverse leakage current.

The device offers a wide breakdown voltage range from 6V to 60V, with excellent clamping pulse performance and low forward leakage current. Its reverse leakage current is low, and typical surge energy rated from 50A to 300A. It is also tested to comply with applicable IEC61000-4-2, IEC61000-4-5, and UL1449 requirements.

In conclusion, the RSB16F2T106 TVS diode device is a multilayer silicon breakdown protection device which provides a variety of applications, such as automotive data buses and control circuits, industrial systems, communication systems, PCs, and other consumer electronics. The device employs the Avalanche-Voltage Principle and offers superior ESD protection, with a breakdown voltage range from 6V to 60V, fast response to high frequency events, and excellent clamping pulse performance. Furthermore, the device meets international standard requirements and provides long-term system reliability.

The specific data is subject to PDF, and the above content is for reference