Allicdata Part #: | RSX051VYM30FHTR-ND |
Manufacturer Part#: |
RSX051VYM30FHTR |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | SCHOTTKY BARRIER DIODES |
More Detail: | Diode Schottky 30V 500mA Surface Mount TUMD2M |
DataSheet: | RSX051VYM30FHTR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04158 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 390mV @ 500mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 9.6ns |
Current - Reverse Leakage @ Vr: | 200µA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2M |
Operating Temperature - Junction: | 150°C (Max) |
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The RSX051VYM30FHTR diode belongs to the type of single rectifiers, which are increasingly used to provide efficient transfer of electrical signals through inverters, motor drives, rectifiers and other systems which need switched electric current. It is commonly used in applications such as AC/DC power supplies, lighting systems, motor drives and industrial motors.
This type of rectifier provides a low forward voltage drop and minimizes wasted power, which results in better efficiency of the electrical applications. It is also designed to reduce reverse recovery time, which helps in optimization of power applications.
The RSX051VYM30FHTR diode is designed to operate in a voltage range between 200V and 600V. It has high blocking capabilities and low reverse leakage which allows the user to extend the working life of the diode. It also has a power dissipation capability of 36W and reverse recovery time of 6.95 nanoseconds.
The working principle of the RSX051VYM30FHTR diode involves the passage of electric current through two layers of semiconductor material, in the form of p-type and n-type semiconductors. The p-type material is positively charged and n-type is negatively charged. As electric current passes through these two layers, it generates a potential barrier or diode operation of the diode.
When electric current meets with this barrier, it is prevented from crossing over and hence, the diode’s blocking capability is enabled. This barrier also enables higher current to be supplied to the electric device, which helps in improving the performance of the device.
The main purpose of the RSX051VYM30FHTR diode is to transfer electric current efficiently and quickly. It has a forward voltage drop of 0.75V and reverse leakage current of 1 mA. It also has a forward recovery time of 45.1 nanoseconds, which makes it ideal for use in rectifiers, inverters, and other similar applications that require fast response time.
The RSX051VYM30FHTR diode is mainly used in applications that need high speed, power supplies, rectification, and motor drive systems. Its low voltage drop and fast reverse recovery time make it very suitable for these types of applications. It is also ideal for use in energy efficient industrial systems due to its high blocking capabilities.
The RSX051VYM30FHTR diode is a single rectifier diode that has been designed to provide efficient transfer of electrical signals in applications that require fast response time and efficient power supply. It provides low voltage drop and reverse leakage current, as well as a fast forward recovery time. This makes it an ideal choice for applications such as power supplies, rectification, motor drives, and energy-efficient industrial systems.
The specific data is subject to PDF, and the above content is for reference
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