RT29L16G20NN

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RT29L16G20NN is a DRAM integrated circuit developed by Samsung that targets high-end embedded, server, and storage applications. It is a LPDDR4-type DRAM with a maximum frequency of 2133MHz and has a broad voltage range. It is designed to integrate with the DRAM controller in order to optimize the power management for DRAM-based applications.

The RT29L16G20NN has a wide range of application fields. For example, it is utilized in industrial computing, aerospace and defense, automotive, consumer electronics, and computational storage. The product is able to support multiple memory configurations, multiple operating frequencies, and various input/output signals. It also supports several interface protocols such as R/W command, DDIO, DRAM fuse, and LVDS. Additionally, this DRAM chip offers enhanced features for fail-safe system protection, fault detection, and thermal management.

The RT29L16G20NN also works in a very simple and straightforward manner. First, the DRAM controller controls the refresh operations, sending requests to the RT29L16G20NN to read or write data to its memory banks. The DRAM controller also controls the voltage and timing to the DRAM chips, allowing the DRAM to enter various operating states such as suspend, self-refresh/power-down, and standby. During regular operation, the DRAM controller issues commands and data to/from the RT29L16G20NN. These commands are then decoded and carried out appropriately by the DRAM.

This RT29L16G20NN DRAM chip is designed to provide a high-performance solution for various modern-day applications. Its integrated power and thermal management features provide for efficient operation. Coupled with its wide range of application fields, the RT29L16G20NN DRAM chip presents itself as an attractive choice for many different applications.

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