S10KC V6G Allicdata Electronics
Allicdata Part #:

S10KCV6G-ND

Manufacturer Part#:

S10KC V6G

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 800V 10A DO214AB
More Detail: Diode Standard 800V 10A Surface Mount DO-214AB (SM...
DataSheet: S10KC V6G datasheetS10KC V6G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.08633
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The S10KC V6G is a single-phase, passivated, low-forward voltage drop diode designed for a broad range of applications, such as fast switching and rectification. It has a proven track record of being one of the most reliable diodes in a variety of environments. The S10KC V6G has a wide operating temperature range of -40°C to +85°C, making it suitable for use in industrial, automotive and consumer electronics applications.

A single-phase passivated low-forward voltage drop diode (S10KC V6G) is a rectifier diode that uses an oxide passivated junction to reduce the forward voltage drop. It is used for a variety of applications, including AC-DC rectification, switching, reverse current protection, and in small signal circuits. The passivated junction of the S10KC V6G also reduces its thermal voltage rating, resulting in more efficient operation.

The S10KC V6G provides high efficiency by minimizing conduction losses. Its solid state construction and oxide passivation layer make it relatively resistant to joule heating, which can increase power output. Its low forward voltages drop across the diode also ensures that it does not produce large signal losses. Additionally, the S10KC V6G has excellent surge capabilities and is resistant to breakdown.

The working principle of the S10KC V6G is based on the rectifier diode’s ability to control the flow of current either in one direction or the other. When a positive voltage is applied to the anode of the diode, the electrons move through the P-N junction. The current flows from the anode to the cathode, leaving a charge balance inside the diode that controls the current flow. The reverse voltage applied to the diode will be blocked and the current will not flow. This is because the charge balance within the P-N junction is greater in the reverse direction than in the forward direction.

The single phase passivated low-forward voltage drop diode is designed for applications where fast switching and rectification are required. Its wide operating temperature range and excellent surge capabilities make it ideal for industrial, automotive, and consumer electronics applications. Additionally, its solid state construction and oxide passivation layer make it resistant to joule heating and thermal voltage ratings, and its low forward voltage drop limit signal losses. This makes the S10KC V6G a reliable and efficient choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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