S12KCHM6G Allicdata Electronics
Allicdata Part #:

S12KCHM6G-ND

Manufacturer Part#:

S12KCHM6G

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 800V 12A DO214AB
More Detail: Diode Standard 800V 12A Surface Mount DO-214AB (SM...
DataSheet: S12KCHM6G datasheetS12KCHM6G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.10551
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes are heavily used in all types of electronics as they’re able to pass current in one direction while blocking it in the other, making them perfect for rectifying AC-to-DC and DC-to-DC voltage conversion. The S12KCHM6G is a single-phase ultrafast diode, specifically designed for low voltage switch mode applications such as motor drives, power supplies, and power converters. This article will discuss the application field and working principles of the S12KCHM6G.

Application Field

The S12KCHM6G is designed to help reduce switching losses in a variety of power circuits. It operates effectively over a wide input voltage range, ranging from 400 to 1200V. Because of this wide voltage range, the S12KCHM6G is well suited for a variety of low-power, high-frequency applications. Examples include motor drives, switching power supplies, inverters, and other power converters. Generally, the S12KCHM6G works best with an input frequency of up to 50 shifts per second, such as in high-speed power converters.

Working Principle

The S12KCHM6G is designed to quickly rectify alternating current (AC) into direct current (DC). It features an ultra-fast response time, meaning that it can switch from an “off” or non-conducting state to an “on” or conducting state almost instantly. The S12KCHM6G can also maintain high forward current transfer ratios, meaning that it is able to allow large amounts of current to pass through it without experiencing forward voltage drops. The rectifying action of the S12KCHM6G is achieved through the diffusion of minority carriers, which are typically electrons due to the device’s N-type construction. When a forward bias voltage is applied to the S12KCHM6G, the electrons are diffused, creating a conductive “channel” in the silicon, which allows current to flow in one direction (the forward direction). The reverse current, however, is blocked because the diffusion of electrons is no longer possible.

Heat Dissipation

In some applications, the S12KCHM6G may become overheated due to large currents that pass through it. To reduce the chances of overheating, it is important to ensure that proper heat dissipation measures are taken. The device’s mounting surface should be properly insulated to reduce heat and ensure that the device does not overheat. Additionally, it is important to keep the device’s wiring short and free from obstructions, as this will reduce the device’s total power consumption and ensure that it operates within its recommended temperature range.

ConclusionThe S12KCHM6G is a single-phase ultrafast diode that is designed for use in low voltage switch mode applications. It is able to quickly rectify AC-to-DC and DC-to-DC voltage conversion because of its ultra-fast switching speed. Proper heat dissipation measures should be taken to ensure that the device does not become overheated. By understanding the application field and working principle of the S12KCHM6G, it is possible to better utilize this device in power circuit applications.

The specific data is subject to PDF, and the above content is for reference

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