Allicdata Part #: | S1DBHR5G-ND |
Manufacturer Part#: |
S1DBHR5G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 1A DO214AA |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AA (SMB... |
DataSheet: | S1DBHR5G Datasheet/PDF |
Quantity: | 1000 |
6800 +: | $ 0.05001 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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S1DBHR5G Application Field and Working Principle
Introduction
S1DBHR5G is a type of diode rectifier, specifically a single layer diode bridge rectifier. The device is a semiconductor component that is used to convert alternating current (AC) to direct current (DC). This makes it a useful component for applications that require relatively low levels of power conversion and power management.Applications
S1DBHR5G is typically used in many commercial and industrial applications. It is common in automated industrial processes and can be used as a capacitor in AC or DC power supplies. It is also used in power transmission and distribution systems, as well as devices that require power conditioning and regulation.Advantage
One advantage of S1DBHR5G is its compact size, which allows it to fit into restricted spaces. Another advantage is that, unlike a normal diode rectifier, it allows AC power to pass through both directions. This flexibility makes it useful for applications where alternating current is present.The S1DBHR5G also has a high power-handling capacity and is able to withstand large withstand spikes in voltage without being damaged. The rectifier’s low forward voltage drop and high reverse-recovery time make it suitable for use in applications that require high efficiency.Design
The S1DBHR5G is constructed using silicon and is available in two main packages. It consists of a single layer of semiconducting material with two anode and two cathode outputs. The internal construction of the device allows it to convert alternating current to direct current.Working Principle
The working principle of the S1DBHR5G can be understood by considering its internal construction. The device consists of two diodes connected in series between the two anode and two cathode connections. The alternating current is then passed through the device and the diodes allow the current to flow in one direction only due to the unidirectional nature of the diodes.When current is applied to the S1DBHR5G, one diode will be forward biased and the other diode will be reverse biased. The forward biased diode will allow current to flow through it, while the reverse biased diode will not allow current to flow through it. This results in a constant flow of current in the forward direction only, allowing the AC signal to be converted to a DC signal.In addition to this, the S1DBHR5G also has the ability to withstand large spikes in voltage due to its low forward voltage drop and high reverse-recovery time.Conclusion
The S1DBHR5G is a type of diode rectifier, specifically a single layer diode bridge rectifier. It is used in automated industrial processes and AC or DC power supplies. It has a compact size, high power-handling capacity and can withstand large spikes in voltage. The rectifier’s working principle can be understood by considering its two diodes, which cause alternating current to be converted to direct current in one direction only.The specific data is subject to PDF, and the above content is for reference
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