S1DHR3G Allicdata Electronics
Allicdata Part #:

S1DHR3G-ND

Manufacturer Part#:

S1DHR3G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 200V 1A DO214AC
More Detail: Diode Standard 200V 1A Surface Mount DO-214AC (SMA...
DataSheet: S1DHR3G datasheetS1DHR3G Datasheet/PDF
Quantity: 1000
10800 +: $ 0.02710
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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S1DHR3G is a single diode rectifier for a variety of applications, including power supplies and power converters. This device is capable of handling up to 200 volts and up to 10 amperes of current, making it suitable for a wide range of applications.The diode rectifier is a forward-biased rectifying junction. It is composed of two p-type and n-type semiconductor regions. During the operation, the diode gets forward-biased by applying a positive voltage to its anode. The diode then acts as a low resistance path and allows electric current to pass through it in one direction while blocking the current flow in the opposite direction.This device is characterized by its low forward voltage drop (Vf) due to its highly efficient silicon material. The maximum Vf of the S1DHR3G is 0.60V. This low Vf helps to improve power efficiency and reduces power losses.The S1DHR3G also features a wide operation temperature range (-55°C to 125°C). This wide operation range allows the device to function properly even in harsh environmental conditions. Furthermore, the sophisticated packaging technologies of the S1DHR3G ensures that the device will remain mechanically robust and durable.The S1DHR3G is ideal for a variety of applications where high voltage, high current, and high temperatures are present. It can be used to provide protection against overvoltage, as well as protection against momentary power surges. This device is also suitable for a variety of power supply and power converter applications.In terms of working principle, the diode works by allowing electric current to flow in the direction of its forward-biased junction, and blocking the opposite direction. During the forward-bias, the diode induces a voltage drop due to its low resistance, allowing the current to flow.The S1DHR3G is a highly efficient device that is suitable for a variety of applications. Its low forward voltage drop and wide operation range make it suitable for a wide range of applications. With its robust packaging and its ability to handle high voltage and high current, the S1DHR3G is an ideal choice for many different applications.

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