Allicdata Part #: | S1DHR3G-ND |
Manufacturer Part#: |
S1DHR3G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 1A DO214AC |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | S1DHR3G Datasheet/PDF |
Quantity: | 1000 |
10800 +: | $ 0.02710 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 175°C |
Description
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S1DHR3G is a single diode rectifier for a variety of applications, including power supplies and power converters. This device is capable of handling up to 200 volts and up to 10 amperes of current, making it suitable for a wide range of applications.The diode rectifier is a forward-biased rectifying junction. It is composed of two p-type and n-type semiconductor regions. During the operation, the diode gets forward-biased by applying a positive voltage to its anode. The diode then acts as a low resistance path and allows electric current to pass through it in one direction while blocking the current flow in the opposite direction.This device is characterized by its low forward voltage drop (Vf) due to its highly efficient silicon material. The maximum Vf of the S1DHR3G is 0.60V. This low Vf helps to improve power efficiency and reduces power losses.The S1DHR3G also features a wide operation temperature range (-55°C to 125°C). This wide operation range allows the device to function properly even in harsh environmental conditions. Furthermore, the sophisticated packaging technologies of the S1DHR3G ensures that the device will remain mechanically robust and durable.The S1DHR3G is ideal for a variety of applications where high voltage, high current, and high temperatures are present. It can be used to provide protection against overvoltage, as well as protection against momentary power surges. This device is also suitable for a variety of power supply and power converter applications.In terms of working principle, the diode works by allowing electric current to flow in the direction of its forward-biased junction, and blocking the opposite direction. During the forward-bias, the diode induces a voltage drop due to its low resistance, allowing the current to flow.The S1DHR3G is a highly efficient device that is suitable for a variety of applications. Its low forward voltage drop and wide operation range make it suitable for a wide range of applications. With its robust packaging and its ability to handle high voltage and high current, the S1DHR3G is an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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