Allicdata Part #: | S1GBM4G-ND |
Manufacturer Part#: |
S1GB M4G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 400V 1A DO214AA |
More Detail: | Diode Standard 400V 1A Surface Mount DO-214AA (SMB... |
DataSheet: | S1GB M4G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.05001 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The S1GB M4G is a single diode rectifier which has the ability to withstand voltage up to 20 KV and current up to 10 Amps. It is widely used in industrial and consumer products due to its compact size and lightweight design. The S1GB M4G provides low forward voltage drop, fast reverse recovery times, and low leakage current with minimal overshoot.
The S1GB M4G is ideal for high-current rectification applications such as automotive, LED lighting, and smart power supplies. It can be used in low-power inverters, converters, and AC-DC bridges. The S1GB M4G is available in standard DO-35 package and includes a yellow field plate to reduce device capacitance and enable better EMI performance.
The S1GB M4G utilizes a highly efficient PN junction to control current flow. When a positive voltage is applied across the terminals, electrons flow from the positive terminal to the negative terminal, and the resulting current is referred to as the forward bias. When a negative voltage is applied, the electrons flow from the negative terminal to the positive terminal, resulting in a reverse flow which is referred to as reverse bias.
The diode\'s forward voltage drop is determined by the device\'s forward current and its junction temperature. The forward voltage drop of the S1GB M4G is very low, achieving a typical value of 0.7V at 1A. This low forward voltage drop allows for high efficiency power conversion in power supplies, AC-DC bridges, and inverters.
The S1GB M4G also has a fast reverse recovery time. This can be attributed to the device\'s optimized diffusion region, low capacitance design, and low diode junction capacitance. The fast reverse recovery time allows for higher power efficiency and better EMI performance. The reverse recovery time of the S1GB M4G typically ranges between 30 - 50 ns.
In addition, the S1GB M4G\'s low fuel leakage current ensures that the device can be used in applications where low power losses are essential. The device\'s typical leakage current ranges between 0.25 - 2 mA.
The S1GB M4G single diode rectifier has many advantages, making it a popular choice for applications requiring high voltage and current capabilities. Its low forward voltage drop, fast reverse recovery time, and low leakage current make it an ideal solution for many rectification applications.
The specific data is subject to PDF, and the above content is for reference
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