S1GTR Discrete Semiconductor Products |
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Allicdata Part #: | 1655-1504-2-ND |
Manufacturer Part#: |
S1GTR |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | DIODE GEN PURP 400V 1A SMA |
More Detail: | Diode Standard 400V 1A Surface Mount SMA (DO-214AC... |
DataSheet: | S1GTR Datasheet/PDF |
Quantity: | 235000 |
5000 +: | $ 0.01342 |
10000 +: | $ 0.01167 |
25000 +: | $ 0.01050 |
50000 +: | $ 0.00934 |
125000 +: | $ 0.00778 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA (DO-214AC) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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The single-gate turn-off thyristor (S1GTR) is a two-terminal solid-state switching device of the diode-rectifier family. It is designed to act as an electronic switch to control the flow of current in a circuit. This device is a two-terminal bidirectional thyristor with a gate electrode located at one end. The operation of this device is determined by the state of the gate. If a positive or negative voltage is applied to the gate, the device switches into an on state, allowing current to flow through it. If the gate voltage is removed, the device switches off.The most common application of these devices is in the control of AC power supplies. The S1GTR can be used to regulate the flow of current from the power source, allowing for fine tuning of power supply settings and power control. It can also be used in high-power switching applications like motor speed control and power management.The S1GTR works on the principle of gate turn-off. When a voltage is applied to the gate, it turns on and allows current to flow through it. When the gate voltage is removed, the device switches off, blocking the flow of current.This device is composed of two main components, the gate and the thyristor. The gate is made up of an insulated gate field-effect transistor (IGFET) which is connected to the control electrode of the thyristor. The thyristor is made up of layers of P-type and N-type semiconductor materials that form an intrinsic junction. The junction has two states, an on state and an off state. The thyristor can be switched between the two states by controlling the voltage applied to the gate.The S1GTR is a versatile device with a wide range of applications. It can be used to control AC, DC, and pulse power supplies, as well as motor speed, lighting in residential and industrial applications, and high voltage rectification. This device is also widely used in the automotive, energy, and aerospace industries for power supply control and motor speed control.The S1GTR is a reliable and efficient device due to its fast switching speeds and low power losses. It is simpler and cheaper to use than other switching devices and has a longer life time than other similar devices.The operation of the S1GTR is easy to understand. When a positive or negative voltage is applied to its gate, the device switches on, allowing current to flow through it. When the gate voltage is removed, the device switches off, blocking the flow of current. The device can also be used in pulse-width modulation (PWM) applications by controlling the length of gate pulses. This feature allows for applications such as speed control or dimming of lights.The S1GTR is a reliable and efficient two-terminal electronic switch that can be used in a wide range of applications from power supply control to motor speed control. Its fast switching speeds and low power losses make it an optimal choice for various switching applications. This device is easy to operate, reliable, and cost effective.The specific data is subject to PDF, and the above content is for reference
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