Allicdata Part #: | 1655-1505-2-ND |
Manufacturer Part#: |
S1JTR |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | DIODE GEN PURP 600V 1A SMA |
More Detail: | Diode Standard 600V 1A Surface Mount SMA (DO-214AC... |
DataSheet: | S1JTR Datasheet/PDF |
Quantity: | 100000 |
5000 +: | $ 0.01342 |
10000 +: | $ 0.01167 |
25000 +: | $ 0.01050 |
50000 +: | $ 0.00934 |
125000 +: | $ 0.00778 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA (DO-214AC) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The Silicon-Controlled Rectifier (SCR) is a three-terminal semiconductor device used as an electronic switch or controller. It has two stable states, off and on, and can be turned on by an external signal, such as a voltage or current, with the other two terminals acting as the controlling signal. The SCR has been around for decades and is widely used in many industrial and consumer applications. One specific type of SCR, the S1JTR, is designed for use in high power switching applications.
The S1JTR is a medium current SCR, meaning it can handle higher currents than a normal SCR, reaching peak values up to several thousand amperes. This makes the S1JTR ideal for applications requiring high power switching, such as industrial motors, power converters, and power inverters. It can also be used in other applications, such as overcurrent, overvoltage and spike protection.
One of the biggest advantages of the S1JTR is its ability to handle high rates of dV/dt, meaning that it can switch voltage quickly without damage to components. This makes the S1JTR ideal for many high-speed switching applications.
The S1JTR is constructed using a combination of PNPN structures, each consisting of two P-type and two N-type transistors. The S1JTR has two gates, one N-type and one P-type, as well as two diodes. The two diodes act like self- protective mechanisms, helping to prevent excessive power from getting into the gate or from being released from it in the event of a malfunction or over-current condition.
The working principle of the S1JTR is fairly straightforward. When a voltage is applied to the gate, it causes a current to flow through the two N-type transistors, which in turn produces a current through the P-type transistor. This current then turns the device “on” and the current flow can now continue through the two P-type transistors and the two diodes. Once the voltage is removed from the gate, the current flow stops, and the device is “off”.
The S1JTR is an excellent choice for applications requiring high power switching and has been used extensively in industrial and consumer applications for decades. Its ability to handle highrates of dV/dt and its strong protective features make it a reliable and safe device in many high power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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S1JTR | SMC Diode So... | 0.01 $ | 100000 | DIODE GEN PURP 600V 1A SM... |
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