| Allicdata Part #: | S1JVNJD2873T4G-ND |
| Manufacturer Part#: |
S1JVNJD2873T4G |
| Price: | $ 0.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANSISTOR PNP BIPO |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 2A 65MHz 1.68W Su... |
| DataSheet: |  S1JVNJD2873T4G Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.19500 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 2V |
| Power - Max: | 1.68W |
| Frequency - Transition: | 65MHz |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
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Introduction to S1JVNJD2873T4G
The S1JVNJD2873T4G is a single, bipolar junction transistor (BJT) manufactured by S1 Corp. It is an N-type field-effect transistor that can be used in a variety of applications in electrical and electronic circuits. The device is available in a variety of sizes and configurations. The full package dimensions of the S1JVNJD2873T4G are 8.6 mm x 8.35 mm x 7.36 mm.
Application Field of S1JVNJD2873T4G
The S1JVNJD2873T4G is a versatile transistor that can be used in a wide range of applications, such as:
- Amplification.
- Signal switching.
- Power switching.
- Linear regulation.
- Motor control.
- Test and measurement equipment.
- Audio and video devices.
The S1JVNJD2873T4G can also be used in automotive, communications, consumer electronics, industrial and military applications.
Working Principle of S1JVNJD2873T4G
The S1JVNJD2873T4G is based on the principle of operation of a bipolar junction transistor. It functions as an electronic switch, effectively controlling the electrical current between its terminals. The device can be used in either an N-channel or P-channel configuration, depending on the desired application.
In an N-channel configuration, the base of the transistor is used as an electrical control point. When the base terminal is energized, the conduction between the other two terminals (collector and emitter) is enabled. Conversely, when the base is de-energized, the conduction is reduced, effectively blocking the current.
Similarly, the P-channel configuration works in the same way, with the exception that the polarity of the electrical control voltage is opposite. The operation of the S1JVNJD2873T4G in either the N-channel or P-channel configuration depends on the application and the desired outcome.
Conclusion
The S1JVNJD2873T4G is an advanced transistor from S1 Corp, designed for use in a variety of applications in electrical and electronic circuits. Its versatile design can be configured for either an N-channel or P-channel operation. The device functions on the principle of bipolar junction transistor, controlling the electrical current between its terminals by enabling or blocking the conduction.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| S1JVNJD2873T4G | ON Semicondu... | 0.22 $ | 1000 | TRANSISTOR PNP BIPOBipola... |
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