S1MA-E3/61T

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1000V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 1A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	1µs
Current - Reverse Leakage @ Vr:	3µA @ 1000V
Capacitance @ Vr, F:	8pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AC, SMA
Supplier Device Package:	DO-214AC (SMA)
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	S1M

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S1MA-E3/61T applications and working principleS1MA-E3/61T is a type of diode based rectifier, which is designed for commercial applications, featuring avalanche breakdown characteristics. It is made from silicon semiconductor material and offers excellent surge capability, making it suitable for a wide range of applications such as rectifying, inversion, shunting and voltage clamping.The S1MA-E3/61T rectifier is a single-diode, single-phase power device, which uses two lead terminals – the anode and the cathode – to connect with the power source. The anode is the positive terminal, while the cathode is the negative terminal. It also has a case that needs to be connected to a heatsink, as the S1MA-E3/61T can produce a great amount of heat during its operation.The device works by allowing current to flow in one direction only, due to its asymmetrical forward and reverse biasing characteristics. This is useful for rectifying AC current and it’s also crucial for the performance of voltage clamping circuits. To understand this, it helps to break down the individual working principle of the S1MA-E3/61T’s components.The first component is the diagonal P-S-N junction, which acts as the main link for conductive current flow. This junction is formed by connecting the anode to the positive side and the cathode to the negative side. To ensure effective current flow, the junction is usually slightly reverse-biased so the electrons in the anode are repelled and forced towards the negative side.The second component is the avalanche breakdown dopant, which is located near the junction. The dopant is a form of semiconductor material that has a higher mobility and greater diffusivity of electrons and holes. When a reverse current is applied, a certain amount of avalanche breakdown results, allowing current to flow out at high speeds and quickly reverse the bias.The third component is the sequence of layers inside the diode, which block the majority of reverse current while allowing a relatively small amount to pass through. The layers act as a barrier allowing current to flow in one direction but not the other.Finally, the fourth component is the two layers of leaded soldering pins. The two pins are anode and cathode and are used to connect the device to the power source or other components in the circuit.To sum it up, the working principle of the S1MA-E3/61T is based on several components: the diagonal P-S-N junction, the avalanche breakdown dopant, the inner layers and the two leaded solder pins. It is designed to rectify AC current and offers excellent surge capability, making it suitable for a wide range of applications.

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