Allicdata Part #: | S1MDFQ-13DITR-ND |
Manufacturer Part#: |
S1MDFQ-13 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 1KV 1A DFLAT |
More Detail: | Diode Standard 1000V 1A Surface Mount D-Flat |
DataSheet: | S1MDFQ-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05456 |
30000 +: | $ 0.05105 |
50000 +: | $ 0.04576 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 6pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | D-Flat |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The S1MDFQ-13 diode is a single high power rectifier with a peak repetitive reverse voltage of 1300V and an average forward current of 6.5A. It is widely used in industrial and commercial applications, as well as in consumer electronics, such as DVD players and HDTVs.
The S1MDFQ-13 is a glass passivated junction rectifier and has a beneficial feature such as thermal protection, transient thermal response, and an operating temperature range of -65°C to +175°C. It is also important to note that the device has an operating temperature range of around 175°C and is UL recognized for UL E238035.
The main purpose of the S1MDFQ-13 is to convert alternating current (AC) power to direct current (DC) power and is suitable for producing various types of underwater LED lighting. These devices are widely used in the power factor correction circuits in home appliances, automobiles, and other consumer electronics, such as LCD and LED televisions. They can also be used in DC-DC converters, power supplies, and distribution systems.
The S1MDFQ-13 is able to operate reliably in both full and half-wave modes, and has low noise and high efficiency. Its low forward voltage drop and fast switching capabilities provide it a higher efficiency when used in applications where speed is of the essence. The maximum peak junction temperature of the diode is 175°C, and when used in a proper power supply with proper cooling, this diode is capable of discharging peak currents up to 10A.
The working principle of the S1MDFQ-13 is based on the avalanche breakdown effect in a PN junction diode. The device consists of a semiconductor substrate with a junction where the N-type and P-type regions meet. The N-type region has a negative charge, while the P-type region has a positive charge. When a voltage of sufficient magnitude is applied across the junction, electron-hole pairs are generated at the junction due to the avalanche breakdown effect. This causes current to flow through the diode, allowing it to serve as a regulator or switch.
The S1MDFQ-13 is a versatile device and can be used in a wide range of applications including boost and buck converters, power supplies, and distribution systems. It is important to ensure proper cooling and ventilation to ensure that the device stays within its specified junction temperature range. Additionally, the S1MDFQ-13 should be used with the appropriate EMI suppression for the application, and selection of the correct rated components is important for the desired performance.
The specific data is subject to PDF, and the above content is for reference
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