S2324TR Allicdata Electronics

S2324TR Circuit Protection

Allicdata Part #:

S2324TR-ND

Manufacturer Part#:

S2324TR

Price: $ 0.03
Product Category:

Circuit Protection

Manufacturer: SMC Diode Solutions
Short Description: TVS DIODE 24V 44V SOT23
More Detail: N/A
DataSheet: S2324TR datasheetS2324TR Datasheet/PDF
Quantity: 1000
18000 +: $ 0.02303
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Current - Peak Pulse (10/1000µs): 1A
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 80pF @ 1MHz
Applications: USB
Power Line Protection: No
Power - Peak Pulse: 300W
Series: --
Voltage - Clamping (Max) @ Ipp: 44V
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V (Max)
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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TVS-Diodes - S2324TR Application Field and Working Principle

Transient Voltage Suppressors (TVSs) are components invented to protect parts of the circuit from transient voltage events. The S2324TR is a type of TVS usually used in such cases and is composed of a 5.6 Volt Zener Diode and a silicon diode in a dual in-line package. The TVS diodes use two different technologies to protect the electronic circuity from reverse breakdown and thermal runaway. It is one of the most commonly used devices for protection in power systems.

The S2324TR is a voltage protector typically used in automotive, industrial, and commercial applications. It provides protection against voltage transients up to 65 V. The power dissipation and peak pulse power rating of the device are 4 watts without power limiting resistor and 6 watts with power limiting resistor. The device has a surge voltage of 8.16V to 65V @ 5.0ms, withstanding peak pulse power of 3000W. It has an operational temperature range of -55°C to 150°C, and is UL1446-certified. The device also has a permissive upper power dissipation limit (PUPDL) of 4W.

The S2324TR is built with the metal oxide semiconductor (MOS) technology, where a metal-oxide-semiconductor capacitor is used to store the transient current and limit the voltage peak. The voltage at the drain-substrate junction is regulated through the combination of an insulated-gate field-effect transistor (IGFET) and a dielectric-metal oxide layer.Strong electric fields are generated from the IGFET that forms an electric "barrier" during high voltages. This keeps the voltage in check and decreases the conduction of current from the drain to the substrate.

The S2324TR also uses a rectifier-like structure for reverse broken protection. This rectifier-like structure consists of two junctions, source and drain, both with reverse voltage protection. It has an on-state resistance of 4.7 ohms and reverse recovery time of 4ns for typical conditions. The component works by using a metal oxide layer on the source side to capture the transient voltage and dissipate it as heat, preventing its propagation to the rest of the circuit.

In addition to its MOS and rectifier technologies, the S2324TR also has a number of unique features that make it ideal for use in a variety of applications. It features a “rugged” design with customizable protection levels, including both surge and ESD protection. Other features include an adjustable power limit resistor, allowing for the device to be used in a wide range of applications, as well as a low reverse leakage for superior equipment protection.

In summary, the S2324TR is a voltage protector suitable for automotive, industrial, and commercial applications. It is built with the MOS technology, which is combined with a rectifier-like structure for reverse broken protection, and has several features, such as adjustable power limit resistor and low reverse leakage, that enable it to provide superior protection for the connected equipment.

The specific data is subject to PDF, and the above content is for reference

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