S25FL127SABMFV003 Allicdata Electronics
Allicdata Part #:

S25FL127SABMFV003-ND

Manufacturer Part#:

S25FL127SABMFV003

Price: $ 1.76
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M SPI 108MHZ 16SOIC
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I...
DataSheet: S25FL127SABMFV003 datasheetS25FL127SABMFV003 Datasheet/PDF
Quantity: 1000
1450 +: $ 1.59982
Stock 1000Can Ship Immediately
$ 1.76
Specifications
Series: FL-S
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC
Description

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S25FL127SABMFV003 Memory Application Field and Working Principle

The S25FL127SABMFV003 is a type of non-volatile memory that is commonly used for a variety of memory applications. It uses a 128-Mbits (1Gbits) floating-gate memory cell structure to store data and is thus able to retain data even when powered off.

Application Field

The S25FL127SABMFV003 is designed for use in a variety of embedded system applications such as computing, automotive, industrial, and communications. It is commonly used for storing code, program memory in a variety of microcontrollers and embedded systems. The S25FL127SABMFV003 can also be used as an external storage device for digital cameras, personal media players, CPUs, and non-volatile data storage.

Working Principle

The S25FL127SABMFV003 works on the principle of a floating-gate memory cell. In this type of memory, data is stored in a floating-gate transistors, with the transistor’s gate insulated from the transistor’s substrate by a layer of oxide. Data is written to the memory by applying an electric charge to the transistor’s gate. To read data from the memory, the electric charge is drained from the transistor’s gate, allowing the state of the transistor (on or off) to be determined.

The memory cell structure is divided into blocks, allowing for faster data read and write operations. Data can be accessed in any order, and blocks can also be erased and written in any order. This is useful in applications where data might be updated frequently, such as when programming embedded systems.

The S25FL127SABMFV003 is capable of operating at high speeds, and has maximized write and read speeds of up to 400 Mbps, with a data retention time of up to 10 years. The memory also has a low power consumption, increasing the battery life of devices where it is used.

Conclusion

The S25FL127SABMFV003 non-volatile memory is a versatile and efficient memory solution for a variety of embedded system applications. With its fast read and write speeds, efficient power consumption, and long data retention time, the S25FL127SABMFV003 is an ideal solution for a variety of memory applications.

The specific data is subject to PDF, and the above content is for reference

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