S25FS064SAGNFM033

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

When it comes to data storage, memory has always been a key component of any system. Memory provides the essential means for storing data, and it is the data that forms the foundation for any type of system. Memory can be classified in two major form factors, dynamic random access memory (DRAM) and static random access memory (SRAM). Additionally, within these two forms there are many types of memory that are specific to certain applications and uses. One of these special types of memory is S25FS064SAGNFM033.

S25FS064SAGNFM033 is a type of spin-torque MRAM (ST-MRAM), which is a type of non-volatile memory, meaning it does not require a power source to retain stored information like traditional random-access memories do. It combines the advantages of DRAM and SRAM, but is generally faster than either. This makes it a good choice for applications where the data needs to be accessed quickly, such as in embedded systems and machine learning.

The S25FS064SAGNFM033 belongs to the family of magneto-resistive memory, which utilizes the magnetic spin of electrons to store data. This type of memory is based on the giant magnetoresistive effect. In this effect, two magnetic layers (both having different magnetic orientations) are separated by a thin insulating layer. When an external magnetic field is applied on the memory cell structure, the effect of the magnetic field on the magnetic states of the layers will cause the resistance of the cell structure to change, thus altering the cell’s data.

The S25FS064SAGNFM033 exhibits excellent features such as fast write performance time and good endurance, making it an ideal choice for embedded applications that require high reliability under harsh conditions. Moreover, it offers an array of bit densities from 16Mb to 1Gb, enabling its use in various different applications. Apart from embedded applications, this memory is widely used in industrial, automotive and consumer application fields.

The working principle of S25FS064SAGNFM033 can be described as follows. When a read or write command is issued, electrons are sent through the memory cell, where the spin-torque effect of the electrons can change the resistance of the layers. Depending on the state of the magnetic layers, the resistance will change, resulting in a change of the stored data in the memory cell. This change can either be a read operation that retrieves data from the memory cell, or a write operation that stores data in the memory cell.

In conclusion, S25FS064SAGNFM033 is an efficient type of non-volatile memory well suited for various applications in embedded, industrial, automotive, and consumer applications. Its unique working principle enables fast write operations and reliable data storage. Thus, it is an ideal choice for memory-intensive applications that require fast read and write operations with minimal power usage.

The specific data is subject to PDF, and the above content is for reference