S25FS512SDSBHI213 Allicdata Electronics
Allicdata Part #:

S25FS512SDSBHI213-ND

Manufacturer Part#:

S25FS512SDSBHI213

Price: $ 4.26
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M SPI 80MHZ
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I...
DataSheet: S25FS512SDSBHI213 datasheetS25FS512SDSBHI213 Datasheet/PDF
Quantity: 1000
2500 +: $ 3.87644
Stock 1000Can Ship Immediately
$ 4.26
Specifications
Series: FS-S
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O, QPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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S25FS512SDSBHI213 Memory Application Field and Working Principle

The S25FS512SDSBHI213 is a memory chip developed by Toshiba, a global leader in flash memory manufacturing. As a flash memory chip, it is ideal for applications requiring reliable storage and high speed access, such as IoT devices, embedded system designs, and digital cameras. This chip has a memory capacity of 512MB, making it an excellent choice for larger applications. In this article, we’ll look at the application field of this memory chip and its working principle.

Application Field

The S25FS512SDSBHI213 is a versatile memory chip suitable for a variety of applications. It is ideal for IoT and embedded system applications, due to its low power consumption, ability to remain inactive for long periods of time, and high speed access. This memory chip is also well suited for storage applications, such as digital cameras, due to its high storage capacity and high data transfer rates. Additionally, this memory chip is resistant to environmental conditions, making it a great choice for outdoor and industrial applications.

Working Principle

The S25FS512SDSBHI213 operates on the same principle as other flash memory chips. It consists of an array of capacitors and transistors, connected to the chip by a series of wires. Each cell in the array can store one bit of data. This data is read and written to the chip by applying voltage to the appropriate transistors and capacitors. The data is stored on the chip in a series of electrical pulses, which represent either a ‘0’ or a ‘1’. The chip is able to read and write data at incredibly fast speeds, making it a great choice for memory intensive applications.

Conclusion

The S25FS512SDSBHI213 is an excellent choice for applications requiring reliable storage and high speed access. Its low power consumption and environmental resistance make it ideal for IoT and embedded system applications, while its high capacity and data transfer rates make it ideal for storage applications. Additionally, its working principle is the same as other flash memory chips, making it an excellent choice for any memory application.

The specific data is subject to PDF, and the above content is for reference

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