S29CD016J0MQAM010 Allicdata Electronics
Allicdata Part #:

S29CD016J0MQAM010-ND

Manufacturer Part#:

S29CD016J0MQAM010

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 16M PARALLEL 80PQFP
More Detail: FLASH - NOR Memory IC 16Mb (512K x 32) Parallel 56...
DataSheet: S29CD016J0MQAM010 datasheetS29CD016J0MQAM010 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: CD-J
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (512K x 32)
Clock Frequency: 56MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 54ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 2.75 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Supplier Device Package: 80-PQFP (20x20)
Description

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The S29CD016J0MQAM010 is one of the many products in the field of Memory Application and Working Principles. It is a high-performance monolithic non-volatile memory device that stores and provides fast access to data. This device is designed to provide an economical solution for applications where data needs to be stored or used quickly. The device features an industry-leading combination of performance, low power consumption, and fast access time. The S29CD016J0MQAM010 can store up to 16 Megabytes (MB) of data, making it great for applications ranging from consumer electronics to medical, automotive, and industrial applications.

The S29CD016J0MQAM010 operates in a variety of modes including asynchronous read, synchronous write and random access functions. The device also includes a built-in self-timing erase/program engine that allows for rapid data transfer. The device can be configured for different functions, such as programming, writing, and reading data. This allows for flexibility and customizability when it comes to applications and usage. The S29CD016J0MQAM010 also features error-correction control (ECC) which enables reliable data storage even in harsh environments.

The S29CD016J0MQAM010 utilizes an advanced non-volatile memory technology that has been specifically designed for use in a wide range of applications. The device utilizes an architecture that optimizes performance and endurance for its intended application. It supports fast random access with a fast read cycle time of approximately 7.5 ns. The device also includes an on-chip hardware-controlled self-timed boot-erase process in order to quickly initialize the device when it is first used. This helps to simplify the device\'s overall operation and further improve its reliability.

The S29CD016J0MQAM010 also features double-data-rate (DDR) internal design, which is ideal for applications that require high speed data transfers and reduces power consumption by up to 50%. This device also contains built in error correction and fault tolerant design which helps to improve data integrity. In addition, the S29CD016J0MQAM010 is designed to operate in temperatures ranging from 0 to 70 degrees Celsius.

Memory application and working principles are an important field of electronics engineering. The S29CD016J0MQAM010 is just one example of an innovative and reliable product used for memory-related applications. Its advanced architecture provides users with a prolonged life cycle and low power consumption, as well as fast access to data. This makes the S29CD016J0MQAM010 perfect for a wide range of applications from consumer electronics to medical and automotive industries.

The specific data is subject to PDF, and the above content is for reference

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