S29CD016J1MQAM113 Integrated Circuits (ICs)

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S29CD016J1MQAM113, developed by Samsung SSD, is a single-level cell (SLC) type memory that serves as an internal or external data storage device for consumer electronics and other applications. Its maximum NAND write/read performance is 35/44 MB/s, respectively. For data retention, its rated maximum endurance is 90K program/erase cycles and its data retention voltage is 2.7V.

S29CD016J1MQAM113 Application Field

S29CD016J1MQAM113 has been designed specifically for consumer electronics and other small-scale applications. It can be used as robust data storage for embedded systems such as gaming consoles, PMPs, memory cards and USB flash drives. Due to its range of features, it’s also an ideal option for a variety of industrial applications such as transportation, medical equipment, and point-of-sale systems.

S29CD016J1MQAM113 Working Principle

S29CD016J1MQAM113 is a single-level cell (SLC) type memory. It is a type of Non-volatile memory (NVM) that operates by storing data on an electrically erasable and programmable read-only memory cell. When data is written to the NVM, a write enable signal is sent to the memory cell. This signal activates the cell and allows for a program operation.

The program operation is based on Fowler-Nordheim tunneling. This is a process by which electrons tunnel or drift through an insulator, in this case, gate oxide. This causes a shift in the threshold voltage of the memory cell between 0 and 1. When a voltage is applied, the cell stores its respective bit. When the memory cell is read, the stored bit’s value is detected through voltage comparison.

In order to ensure data retention, the cell includes more than one transistor. One is designated as a logic select transistor and the other as a data select transistor. The logic select transistor enables a logic operation to always be performed. This ensures that the memory cell retains its respective bit’s value until the cell is again accessed by the application.

Conclusion

S29CD016J1MQAM113 is a single-level cell (SLC) type memory that is ideal for high reliability and performance applications such as embedded systems and industrial applications that require high data storage. The memory cell operates by storing data on an electrically erasable and programmable read-only memory cell. Data retention is guaranteed by a logic select transistor that ensures that the memory cell retains its respective bit’s value until the cell is again accessed by the application.

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