S29GL01GT10TFA010

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The S29GL01GT10TFA010 is a 1 Gigabit (Gb) asynchronous, no-wait-state, low-voltage Flash memory device in which an array of non-volatile memory cells is stacked in the form of multiple planes, blocks, and pages. It meets the needs of a wide array of industries and applications including consumer, automotive, industrial and medical.

The device is fabricated with a fundamental memory unit consisting of two planes, each implementing one 16 Megabits (Mb) array. This provides a total memory capacity of 32 Mb. Access to each plane requires repetitious time for pre-charge and discharge operations. Read, program and erase operations are supported on each memory plane by individually bonding separate pads.

The S29GL01GT10TFA010 operates over a wide range of temperatures from -40°C to +85°C. It is offered in a 5.8 x 6.0 mm surface mount plastic package. This device has built-in redundant architecture and conforms to the industry’s most advanced reliable Flash standards. The device is available in two densities of 2 Gb or 4 Gb.

The S29GL01GT10TFA010 combines a static memory array and a sophisticated control state machine, dedicated data and robust algorithms implementing algorithms such as wear levelling and bad blocks management. These features help improve endurance, extend lifetime and increase overall data integrity.

The S29GL01GT10TFA010 also features several properties that make it suitable for harsh environments, such as low power consumption, wide voltage range operation, wide temperature operation and resilient error correcting code (ECC). This device is built using advanced 0.25μm 8-level metal process technology.

The S29GL01GT10TFA010 can operate at up to 500MHz depending on the logic voltage requirements. It is inbound with a built-in static memory array and a state machine to control operations. This device provides an integrated Error-Correcting Code (ECC) function to improve data retention and reduce errors due to power fluctuations and temperature variation.

In terms of its application fields, the S29GL01GT10TFA010 is suitable for many industries, including consumer electronics, automotive and medical devices, handheld devices, embedded systems and industrial control systems. It can be used to store and process data for applications such as dynamic graphics display, media storage, network recording and gaming.

In particular, this memory device is optimised for applications with large databases, multiple files, or high data streaming. It has a fast initialisation feature which allows for quick data retrievals to speed up system performance. The S29GL01GT10TFA010 has a low change-on-the-fly configuration that allows it to be user configurable, allowing for different configurations to achieve the desired data throughput.

The working principle of the S29GL01GT10TFA010 is based on the principle of no-wait-state memory. With no-wait-state memory, each row or page in the memory array can be accessed independently, without relying on other access or operations. This reduces latency, increasing the system\'s overall speed.

The S29GL01GT10TFA010 also features a wear levelling and bad block management (BBM) algorithm. This algorithm distributes write operations over multiple pages in the memory array, helping to ensure the integrity of the data stored. The BBM function also helps to keep track of bad memory blocks, providing more accurate data operability. In addition, the device also features error-correcting codes, which can help minimise errors due to power fluctuations and temperature variation.

The S29GL01GT10TFA010 is an ideal memory device for applications that require fast and reliable read and write operations. It is also a great choice for applications that require low power consumption, wide voltage range operation and resilient error correcting codes. The device has a wide range of application fields, allowing it to be used on a variety of platforms, from embedded systems and automotive systems, to consumer electronics and media storage.

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