Allicdata Part #: | S29GL256S10TFB023-ND |
Manufacturer Part#: |
S29GL256S10TFB023 |
Price: | $ 4.34 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 256M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 1... |
DataSheet: | S29GL256S10TFB023 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 3.94164 |
Series: | GL-S |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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The S29GL256S10TFB023 is a 64Mb (8M x 8/16/32) pseudo-SRAM manufactured by Spansion. It is an example of a multi-ported, random-access memory (RAM) device. Its pseudo-SRAM technology combines the familiar asynchronous interface of Static RAM (SRAM) with the cost-effectiveness of traditional DRAM devices. The S29GL256S10TFB023 features four independent ports with asynchronous access and is able to transfer 8, 16, or 32 bits of data in a single operation.
The S29GL256S10TFB023 is used in many different application fields, from communications and networking to medical imaging and hard disk drive controllers. It can be used either as a stand-alone memory device or as an integrated component in a larger system. The device is suitable for use with a wide range of microprocessors and embedded MCUs, including ARM and x86-based systems. The S29GL256S10TFB023 is available in a variety of packages, including CLCC, SOIC, and TSSOP.
The working principle of the S29GL256S10TFB023 is fairly simple. When data is written to the device, it stores the information in its memory cells. When the data is read back, the device retrieves the previously stored information and presents it on the output port. The device can access either the entire data bus width in a single operation, or any subset of it in multiple operations.
The S29GL256S10TFB023 also sports a number of additional features designed to improve performance and reliability. It has an on-chip ARRAYX (Aging Resistance Technology) Circuit that provides up to 10 times better write endurance than that of conventional SRAM. The device also includes power-management features such as sleep-mode operation and active-low control. Finally, the S29GL256S10TFB023 is compliant with a number of industry standards, including JEDEC, ONFI, and Toggle-Mode.
In conclusion, the S29GL256S10TFB023 is an ideal memory solution for a variety of applications. The device combines the speed and low latency of SRAM technology with the cost-effectiveness and capacity of DRAM. Thanks to its advanced features and proven reliability, the S29GL256S10TFB023 is a popular choice for many design engineers.
The specific data is subject to PDF, and the above content is for reference
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