![S29GL01GP12TFI010 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | S29GL01GP12TFI010-ND |
Manufacturer Part#: |
S29GL01GP12TFI010 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8) Parallel 120... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 120ns |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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S29GL01GP12TFI010 is a non-volatile memory from Samsung. It belongs to the category of Flash memory, commonly known as NAND Flash, and is used for data storage and applications requiring high reliability and endurance.
Application Field
S29GL01GP12TFI010 is a small form factor memory device commonly used in consumer electronics, such as digital cameras, digital music players, and gaming devices. It is also used in embedded systems applications, such as automotive, medical, and industrial automation. These applications require dependable data storage despite frequent power cycles and often in harsh environments where other types of memory would not survive.
Working Principle
At the heart of S29GL01GP12TFI010 is the NAND Flash memory cell. This is a non-volatile memory cell, meaning the data is retained even when power is cut off. It consists of a floating gate transistor which stores electrons when electricity passes through it. These electrons represent the bit of data – a zero or a one. When reading or writing data to the memory device, electrical signals are passed through the NAND Flash bitcell. This causes the transistor to be turned on or off, signifying a zero or one.
Data is organized into blocks, and operations on blocks, such as erasing and writing, must be done before individual bits can be written or read. Erasing data is done by electronically forcing all the floating gate transistors to the "off" state. Writing data requires turning individual transistors on or off, depending on the bit being written. A special write verify procedure is employed by the memory device to ensure reliable writing.
Conclusion
S29GL01GP12TFI010 is a dependable non-volatile memory device designed for use in consumer electronics and embedded systems applications. The NAND Flash architecture used in this memory device allows for fast and reliable data storage, despite frequently being subject to harsh conditions. With a small form factor and low power consumption, S29GL01GP12TFI010 is an ideal memory solution for the most demanding applications.
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