
Allicdata Part #: | S29GL01GT11DHB023-ND |
Manufacturer Part#: |
S29GL01GT11DHB023 |
Price: | $ 6.93 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NOR |
More Detail: | Memory IC |
DataSheet: | ![]() |
Quantity: | 1000 |
2200 +: | $ 6.29913 |
Series: | * |
Part Status: | Active |
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The S29GL01GT11DHB023 is a high-density, single-poly non-volatile memory device. It is part of the S29GL-T Family of Serial Presence Detect (SPD) Flash memory components, designed for used in embedded applications requiring high-speed transfers, secure storage, and extended endurance. Its partitioning and wide-temperature capabilities make it an ideal solution for use in embedded system applications.
S29GL01GT11DHB023 Application Field
S29GL01GT11DHB023 is primarily aimed at applications such as industrial peripherals, automotive control systems, and consumer electronics. It is also well-suited for applications involving communications, computer processing and data storage, digital video recording, IP camera recording, set-top boxes, multifunctional printers, and high-end router designs.
As the device is small and easy to integrate, it can be used in the latest portable devices such as netbooks, tablets and smartphones. It can also be used in memory card applications such as Secure Digital cards, Compact Flash cards and MultiMedia Cards.
S29GL01GT11DHB023 Working Principle
The S29GL01GT11DHB023 is a non-volatile memory device that works using a combination of NOR Flash and DDR SDRAM. It operates using a 2-wire Serial Interface (SPI) as its primary mode of data transfer. The device uses SGL-T specific commands to read, program, and erase the memory. To ensure data security, the device offers Advanced ECC (AECC) support, along with Global Block Lockout (GBLO) and 11-bit Unique Word Address (UWA) support.
The S29GL01GT11DHB023 includes an embedded SRAM cache which acts as a buffer, allowing up to 6x faster write and erase operations compared to a traditional non-volatile memory device. The embedded SRAM also provides for a higher-bandwidth, low-latency data throughput and thus higher performance.
The device is also capable of supporting either asynchronous or synchronous mode timing. The asynchronous mode offers a higher throughput than the synchronous mode but requires more complex setup. The synchronous mode offers a lower latency but requires a higher number of clock cycles for data transmission.
S29GL01GT11DHB023 is also equipped with a Power-On Reset (POR) circuit which guarantees that the memory device is reset as soon as power is available to the device, thus providing a stable system. The device also comes with a temperature range of -20°C to 85°C making it suitable for use in a wide range of operational environments.
The S29GL01GT11DHB023 is a high-performance, high-capacity memory solution for embedded, automotive and industrial applications. By offering high speed, secure storage and extended endurance, the device is ideal for these types of applications.
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