S29GL01GT13TFNV23 Allicdata Electronics
Allicdata Part #:

S29GL01GT13TFNV23-ND

Manufacturer Part#:

S29GL01GT13TFNV23

Price: $ 7.29
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8) Parallel 130...
DataSheet: S29GL01GT13TFNV23 datasheetS29GL01GT13TFNV23 Datasheet/PDF
Quantity: 1000
1000 +: $ 6.62540
Stock 1000Can Ship Immediately
$ 7.29
Specifications
Series: GL-T
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 60ns
Access Time: 130ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Description

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S29GL01GT13TFNV23 application field and working principle

Introduction

The S29GL01GT13TFNV23 is a memory device that uses flash memory technology. It has one million bits of memory arranged in 16M x 8 organization. The memory device has a fast program and erase times, which makes it ideal for applications such as data logging, microcontroller code storage and system-level code storage. It also has a wide operating temperature range, which makes it suitable for industrial and automotive applications.

Application fields

The S29GL01GT13TFNV23 is suitable for a wide range of applications. It can be used in industrial and automotive control systems, data logging systems, image and audio storage and other embedded systems. It can also be used for microcontroller code storage, system-level code storage, media playback and other applications. The memory device is also suitable for use in portable memory applications such as mobile phones, MP3 players and netbooks. The device has a low power consumption and fast program and erase times.

Working principle

The S29GL01GT13TFNV23 utilizes flash memory technology to store data. Flash memory is a type of non-volatile memory that retains its stored data even when power is not applied. It is made up of a substrate and a floating gate that is insulated from the substrate. Electrons are stored on the gate when a voltage is applied. When the voltage is removed, the electrons remain stored on the gate. This allows data to be stored in the device even when power is not applied. The device is capable of storing up to one million bits of data arranged in 16M x 8 organization.

Conclusion

The S29GL01GT13TFNV23 is a memory device that uses flash memory technology. It has a fast program and erase times, making it ideal for applications such as data logging, microcontroller code storage and system-level code storage. It is suitable for use in industrial and automotive control systems, data logging systems, image and audio storage and other embedded systems. The device has a low power consumption, making it ideal for portable memory applications such as mobile phones, MP3 players and netbooks.

The specific data is subject to PDF, and the above content is for reference

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