S29GL032N11FFIS13 Allicdata Electronics
Allicdata Part #:

S29GL032N11FFIS13-ND

Manufacturer Part#:

S29GL032N11FFIS13

Price: $ 1.87
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 32M PARALLEL 64BGA
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: S29GL032N11FFIS13 datasheetS29GL032N11FFIS13 Datasheet/PDF
Quantity: 1000
1600 +: $ 1.70054
Stock 1000Can Ship Immediately
$ 1.87
Specifications
Series: GL-N
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (13x11)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S29GL032N11FFIS13 is a high-density memory component designed for a wide array of applications. As a non-volatile provider of flash-based storage, this component is ideal for devices with a flat memory profile and is available in various thicknesses. As a 32MB component with a storage capacity of 16MB per side, the S29GL032N11FFIS13 has the capability to support a range of demanding applications, from code storage to data storage.

The S29GL032N11FFIS13 functions thanks to its advanced 3D NAND architecture. This memory component features 3D NAND cells and lithography technology, which work together to create a unified and scalable platform for producing reliable, high-density memory. The stackable architecture of the S29GL032N11FFIS13 ensures that data occupies minimal space, allowing for denser memory configurations in a variety of product designs.

The S29GL032N11FFIS13 also boasts low-voltage operations, thanks to an advanced I/O design that requires minimal voltage when writing data. This helps reduce power consumption in the memory component, while enabling quick write operations at high speeds. Additionally, the S29GL032N11FFIS13 uses an advanced error correction algorithm to ensure data reliability, while the single- or dual-die configuration makes the component suitable for a variety of usage models.

Common application fields for the S29GL032N11FFIS13 include embedded and enterprise systems, medical instruments, and automotive electronics. The component is highly adaptive, making it well-suited for a range of application-specific tasks, from hosting code to carrying out device updates and data collection processes.

The S29GL032N11FFIS13 is an advanced and efficient memory component that provides enhanced performance to many applications. Its 3D NAND architecture and low-voltage operations ensure that the S29GL032N11FFIS13 is capable of operating in a variety of settings while keeping power consumption to a minimum. Its compact size and stackable design make it an ideal solution for devices with a flat memory profile, and its advanced error correction algorithm helps ensure data integrity. As such, the S29GL032N11FFIS13 is a reliable and versatile memory component for a range of embedded, enterprise, medical, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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