S29GL032N90BFA043 Allicdata Electronics
Allicdata Part #:

S29GL032N90BFA043-ND

Manufacturer Part#:

S29GL032N90BFA043

Price: $ 1.86
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC 32M FLASH MEMORY
More Detail: Memory IC
DataSheet: S29GL032N90BFA043 datasheetS29GL032N90BFA043 Datasheet/PDF
Quantity: 1000
2500 +: $ 1.68316
Stock 1000Can Ship Immediately
$ 1.86
Specifications
Series: *
Part Status: Active
Description

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S29GL032N90BFA043 is a Memory device manufactured by Spansion, Inc. It is a Multi-Chip Module (MCM) that combines a 64Mb non-volatile Synchronous Burst SRAM, a non-volatile Flash memory, and a phase-change non-volatile phase-change memory device. The MCM operates as a single memory module, offering both symmetrical read and write performance with a Serial Peripheral Interface (SPI) interface.

The S29GL032N90BFA043 is used in a variety of applications, such as industrial automation and control, embedded systems, consumer electronics, networking, automotive and telecom. It offers a wide range of features, including fast and reliable operation, low power consumption and high power reliability. The device also supports the SPI standard and supports burst read and write cycle times.

The working principle of the S29GL032N90BFA043 is based on a special type of non-volatile memory known as phase change memory (PCM). PCM is a type of non-volatile memory that uses electrical signals to control the phase of a particular material. The phase of the material can be changed to store and retrieve data. In PCM, the phase of the material is changed between two states, crystalline and amorphous. The characteristic of the crystalline state is that it is capable of storing more energy than the amorphous state, and the amorphous state is capable of dissipating more energy quickly than the crystalline state. In PCM, the electrical signals used to control the phase of the material are called "switches".

The S29GL032N90BFA043 uses an MLC (Multi Level Cell) architecture, which allows for the storage of multiple bits of information in each cell. This allows for higher densities than other types of non-volatile memory. The device also supports burst read and write cycles, which allows for fast access times and improved performance. Furthermore, it supports the SPI standard, which allows for easy communication with the device.

In addition to its high performance and reliability, the S29GL032N90BFA043 also offers excellent thermal performance. Its low power consumption makes it suitable for battery-powered devices. Its high power reliability ensures reliable operation in conditions that require high levels of power cycling. All of these features make the S29GL032N90BFA043 an ideal choice for applications that require reliable and high performance memory.

The specific data is subject to PDF, and the above content is for reference

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