S29GL032N90FAI010

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S29GL032N90FAI010 is a high-density floating-gate CMOS NAND Flash Memory with cost-effective features and high-density storage capacity. This NAND Flash Memory is manufactured by American company with advanced Nitride Oxide Multi-Level Cell (MLC) technology and is suitable for many applications that require high-density nonvolatile storage.

As a type of nonvolatile memory, it has several advantages. It does not require power for data storage and can retain data for more than ten years without refreshing. In addition, it is designed to support fast write and read operations (with speeds up to 55M byte/s). And its endurance of write/erase cycle is up to 5,000 times.

S29GL032N90FAI010 is widely used in the fields of consumer electronics, industrial applications and automotive industry. In consumer electronics and automotive industries, NAND Flash Memories have become more and more popular due to their wide applications in providing non-volatile memory, as well as cost reduction and data storage densities. They are used in many portable electronic devices, such as digital cameras, digital audio players and telecommunication devices.

As far as industrial usage, this NAND Flash Memory can be used in a variety of high-end industrial applications, such as hard disk replacement and intelligent logging applications, where large capacities are needed to store data and records. The memory also can be used in special systems such as cardiac pacemakers and aerospace systems.

The working principle of S29GL032N90FAI010 is based on electrically identifying and isolating highly individual floating gate transistors from a common substrate utilizing a tunnel oxide charge injection barrier. It provides high-density nonvolatile storage for video data, audio data, pictures and more. Its nonvolatile design allows for data to be stored over extended periods of time without a source of power.

Furthermore, this type of nonvolatile memory has a relatively fast write operation that can support most of operations. In addition, the continuous write operations are automatically managed and monitored by the built-in controller, which optimizes the memory reliability and endurance. Moreover, powerful on-chip error correction features (ECC) are enabled to reduce system level bit errors.

In conclusion, S29GL032N90FAI010 is a perfect choice for applications that need high-density, low-cost, and reliable nonvolatile memory solutions. It offers an advanced Nitride Oxide Multi-Level Cell technology and the support of fast write and read operations, making it suitable for many industrial, consumer electronics, and automotive applications.

The specific data is subject to PDF, and the above content is for reference