S29GL064N11TFIV63

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As a kind of non-volatile memory (NVM), S29GL064N11TFIV63 has a wide range of application fields and working principles. The memory chip is compliant with the industry-wide standard JEDEC 8C – 44T, 60T and 76T. It has an almost fully compatible pin and feature set with 55nm Single Level Cell NAND technology.

S29GL064N11TFIV63 is widely used in feature-rich embedded applications. Generally, embedded applications need reliable performance, as a result, NOR provides a high level of robustness. The memory chip utilizes split-gate Flash, which delivers better data reliability, higher memory densities and better endurance. This makes it ideal for applications that require high power and endurance, including automotive and industrial control systems.

The working principle of S29GL064N11TFIV63 is based on a Silicon-On-Insulator (SOI) technology of the transistor and uses anode, gate and dielectric layers in order to achieve traps of electrons. A key feature of this technology is the ability for single or multi-level cells (MLC) to store a single bit or multiple bits per cell. This makes S29GL064N11TFIV63 suitable for high-density data applications with enhanced read performance.

Moreover, the memory chip can reduce the current when compared to a traditional Flash technology. The split-gate architecture of S29GL064N11TFIV63 ensures full compatibility with existing Flash based applications, while providing enhanced energy efficiency, endurance, and data retention compared to traditional Flash. This makes it a great choice for program and data memory in expanding automotive and industrial application.

Additionally, S29GL064N11TFIV63 provide a superior write performance, with a write speed of up to 130Mbps for program write and 160Mbps for erase, allowing for faster device programming cycles. The memory chip also operates at low power consuming, making it suitable for longer battery life.

In conclusion, S29GL064N11TFIV63 is a reliable and efficient non-volatile memory chip for embedded applications. It offers the advantages of single and multilevel cells, better endurance and data retention, enhanced write performance and low power consumption. It provides the reliability and performance required for high-density applications such as automotive and industrial control systems.

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