S29GL064N90TFA010

S29GL064N90TFA010 is a high-performance single-voltage Clock Synchronous Buried -Word Organization (B-WO) Flash Memory designed for a wide range of embedded applications. The device provides high reliability, durability, and ample I/O bandwidth, and is offered in two packages – a 44 pin TSOP1 package and a 48 pin package – allowing it to be used in a huge variety of applications. With its large storage capacity, it is perfect for applications such as software updates, application development, and data logging.

The S29GL064N90TFA010 offers four banking structures – two-way interleaving (RTCHAR0 and RTCHAR1),eight-way interleaving (RTCHAR2-7), and an ultra-high capacity mode, for a maximum of 8 Gigabit (Gb). It also offers 90 nm architecture, 16-bit loading and narrow access times, as well as error correcting capabilities. The memory can operate at both low and high temperatures, from -40°C to +85°C.

The S29GL064N90TFA010 provides the flexibility of a monolithic B-WO NOR flash memory and the advanced features of Multi-Level Cell (MLC) technology, such as multi-tone encoding, built-in redundancy, triple pumping, and temperature compensation. In addition, this memory can be used in a variety of industrial and automotive applications such as automotive ECU/ECM, industrial and fire/safety, and medical. The S29GL064N90TFA010 also incorporates a fast, low-power Serial Peripheral Interface that is suitable for both high-speed and low-power applications.

The working principle of S29GL064N90TFA010 is as follows: Cell Array Controller/Flash Array Management Engine (FAME) is responsible for controlling the cell array and performing flash array operations. It reads, writes, and erases the memory cells based on commands from the host processor. The controller also includes an Error Correction Code (ECC) engine that is used to detect, identify, and correct errors. The controller communicates with the host processor via the Serial Peripheral Interface (SPI). A write latch assists in streamlining the write operations while a read/write buffer is used to store data as it is moved to and from the memory array.

As with all flash memory devices, S29GL064N90TFA010 incorporates an array of blocks and pages organized in a layered format enabling fast and efficient operation of the device. Its array, page, and block size can all be adjusted by the user if desired, allowing for maximum flexibility. The memory operates at the system’s operating frequency, eliminating the need for external clock generation. In addition, the memory offers program and erase suspend and resume, allowing for long multitasking operations.

S29GL064N90TFA010 is a great choice for embedded applications requiring high performance, low power consumption, and high reliability. Its features make it perfect for a wide variety of applications in industrial and automotive, as well as consumer and medical devices. Its long-term reliability and enhanced programming performance make it an attractive solution for those wanting the best performance in the shortest amount of time.