S29GL064N90TFI033 Allicdata Electronics
Allicdata Part #:

S29GL064N90TFI033-ND

Manufacturer Part#:

S29GL064N90TFI033

Price: $ 2.79
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 64M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral...
DataSheet: S29GL064N90TFI033 datasheetS29GL064N90TFI033 Datasheet/PDF
Quantity: 1000
1000 +: $ 2.53680
Stock 1000Can Ship Immediately
$ 2.79
Specifications
Series: GL-N
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Description

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S29GL064N90TFI033 is a type of non-volatile NAND Flash memory, especially suitable for embedded electronics applications. Flash memory is a type of non-volatile memory that can retain information even when the power supply is removed. The memory chip’s construction comprises an array of memory cells, with each cell storing a single bit of information.

Application Field:

S29GL064N90TFI033 is applicable in many fields, particularly in consumer and automotive electronics. This type of memory chip is used in many consumer electronic devices, such as digital cameras, PDAs, mobile phones, and MP3 players. It is also used in automotive electronics, such as GPS devices and car instrumentation. In addition, it is increasingly being used in the field of industrial automation, for the purpose of storing programmable parameters and data.

Working Principle:

The S29GL064N90TFI033memory chip is based on NAND Flash technology and utilizes an array of floating-gate transistors as its memory cells. The cell array is organized into pages, with each page comprising a group of memory cells. In operation, the memory cell is programmed and erased by charging and discharging its floating gate. This process depends on the difference between the charge stored on the gate, relative to its adjacent source and drain. Depending on the voltage on the gate, the cell is programmed to store either a logical ‘1’ or ‘0’. Similarly, in order to erasure memory cells, all their charges are removed.

sWhen the power supply to the memory chip is turned off, the data stored in the memory cells will remain intact. This feature of non-volatility is the key advantage of Flash memory chips. Flash memory is also relatively insensitive to shock and vibration, with a much higher reliability than traditional RAM chips. Furthermore, since Flash memory is essentially solid-state, it is also small in size and consumes low power.

In order to quickly access the memory cells within the chip, the device utilizes a burst architecture. This is based on a type of high-speed serial interface that allows multiple memory locations to be read within a single command. High-speed operation is achieved through the implementation of a multi-level cell structure within the chip.

The S29GL064N90TFI033 is a state-of-the-art memory chip, with a number of features that make it ideal for embedded electronics applications. It offers high reliability and low power consumption, as well as fast access times. This makes it ideal for a wide range of applications and ensures that the chip continues to be a popular choice for many engineering projects.

The specific data is subject to PDF, and the above content is for reference

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