S29GL064S80TFIV63

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a collection of information stored within a technology device, such as a computer, mobile phone, or other electronic device. These stored pieces of information can then be accessed and manipulated as desired by the user. The S29GL064S80TFIV63 is a type of memory used in a range of devices, from gaming consoles to computers. In this article, we’ll discuss the application field and working principle of the S29GL064S80TFIV63.

The S29GL064S80TFIV63 is a type of nonvolatile flash memory that was primarily developed for production use in the late 1990s. It features 8-bit wide bus interface, high-speed erase and write, and requires only 200Mbit/s of interface bandwidth. It is commonly used in gaming consoles, system-on-chip (SoC) designs, electronic control systems, and automotive applications. Additionally, an SRAM can also be added to the system, making it ideal for low-power applications.

The working principle of the S29GL064S80TFIV63 involves the use of an array of memory cells. Each cell contains a memory element – either a transistor, diode, or magnet – that stores a single bit of data. The cells are organized in arrays, each with its own set of control lines that allow the user to select which cells to write or read data from. Additionally, by utilizing the “Page Program” feature, the user can store up to 32 pages of data, combining them into a single page. Furthermore, the “Block Erase” feature makes it possible to erase entire blocks of data with a single command.

The S29GL064S80TFIV63 also features an internal data mask logic that can be used to mask out specific bits of data. This allows the user to read and write data without changing it, thereby simplifying the design of embedded applications. Additionally, the S29GL064S80TFIV63 also features a data retention voltage of 2.7V, ensuring that data stored in the memory cells will be retained for many years. Lastly, the S29GL064S80TFIV63 is equipped with a self-timed programmable erase cycle, allowing it to be easily programmed and erased.

In conclusion, the S29GL064S80TFIV63 is a type of nonvolatile flash memory that is designed for production use in a variety of applications. It features 8-bit wide bus interface, high-speed erase and write, and requires only 200Mbit/s of interface bandwidth. It also boasts an array of control lines that enable the user to select which cells to read or write data to, as well as several features such as an internal data mask logic, data retention voltage of 2.7V, and a self-timed programmable erase cycle. These features make the S29GL064S80TFIV63 an ideal memory solution for embedded applications.

The specific data is subject to PDF, and the above content is for reference