S29GL064S80TFV040 Allicdata Electronics
Allicdata Part #:

S29GL064S80TFV040-ND

Manufacturer Part#:

S29GL064S80TFV040

Price: $ 2.51
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 64M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 80n...
DataSheet: S29GL064S80TFV040 datasheetS29GL064S80TFV040 Datasheet/PDF
Quantity: 1000
192 +: $ 2.28339
Stock 1000Can Ship Immediately
$ 2.51
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Description

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Memory

The S29GL064S80TFV040 employs the NAND Flash technology for non-volatile storage of data. It may be used in applications ranging from consumer electronics to embedded applications. It is in wide use thanks to its cost effective non-volatility, low power consumption, and small size.

The S29GL064S80TFV040 nonvolatile memory employs the floating-gate process and has the following block configurations: A·256kB + 128kB and B·512kB + 128kB. It operates at all VCC levels from 1.7V to 3.6V and temperatures from -40°C to +85°C.

Features:

  • Small package size with top-bottom-side control
  • Advanced memory protection
  • Multiple cycle program and erase
  • High-speed program and erase operations
  • Data accuracy with long retention

Working Principle:

The S29GL064S80TFV040 nonvolatile memory stores data in an array of NAND Flash cells. These cells wear-out over time as a result of program and erase (P/E) operations. The S29GL064S80TFV040 is designed to perform P/E operations on-chip over a wide voltage range of 1.7 to 3.6 Volts.

The S29GL064S80TFV040 nonvolatile memory is designed with a NAND cell that is organized in series string architecture. This architecture has a number of advantages over NOR cell-based designs. NAND cells can be programmed and erased faster than NOR cells resulting in faster erase and programming speeds. NAND Flash is also typically less expensive than NOR Flash due to its cell architecture. NAND Flash memory also requires less power than NOR Flash memory, making it ideal for low power applications.

The S29GL064S80TFV040 includes an array of 256KB+128KB of NAND Flash cells organized in a page of either 512 bytes or 1024 bytes. The first 256KB of the device contains 256 planes of 64K pages. The high density organization of the NAND Flash array allows for faster data I/O rates than are often possible in NOR Flash memory. The S29GL064S80TFV040 also includes a low-power standby mode for further power savings.

The S29GL064S80TFV040 is designed for a variety of memories including application code, data, audio, and image storage. It is well-suited for applications such as consumer electronics, embedded applications, PCs, servers, and ultrasound systems. As such, the S29GL064S80TFV040 is an ideal choice for low-cost, nonvolatile storage.

The specific data is subject to PDF, and the above content is for reference

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