
Allicdata Part #: | S29GL064S90DHVV20-ND |
Manufacturer Part#: |
S29GL064S90DHVV20 |
Price: | $ 2.50 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 64M PARALLEL 64BGA |
More Detail: | FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 90n... |
DataSheet: | ![]() |
Quantity: | 1000 |
260 +: | $ 2.27488 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (4M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-Fortified BGA (9x9) |
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The S29GL064S90DHVV20 belongs to the memory family and is a type of flash memory. Its application field and working principle are discussed below.
Application Field
The S29GL064S90DHVV20 is suitable for consumer electronics, automotive, industrial and medical applications. In consumer electronics, the memory is used in digital cameras, MP3 players and other similar devices. In automotive and industrial applications, S29GL064S90DHVV20 finds use in automotive bodies, embedded systems and home appliances. It is also used in medical applications such as drug delivery, analysis and monitoring equipment. All of these applications highlight the memory\'s superior performance and durability.
Working Principle
S29GL064S90DHVV20 uses a read-only mode to store data. Data is written to the memory by programming it through the control lines. The memory can hold up to 90 million bits of data in an array of 64KB. The memory can also be read and written serially.
The memory has a program/erase cycle of 100,000 times, with a read and write endurance of 100,000 times. It also has a data retention of 10 years, which makes this memory ideal for long-term use. It also has a low operating current, making it power efficient.
The memory has a secure erase feature which ensures that all data stored in the memory is erased before it is reprogrammed. This ensures that no residual data is left in the memory after a reprogramming operation. It also has a self-test feature which can check for any possible errors in the memory and alert the user when any errors are detected.
The memory also has a built-in error correction code which ensures that any errors detected during a read or write operation are corrected before the data is written to the memory. This ensures that the data stored in the memory is accurate and reliable.
The memory has a wide range of operating temperatures, which allows it to be used in a range of environments and conditions. The low-power requirements make the memory suitable even for low-power systems, where it can still operate reliably without draining the system resources.
In addition, the memory has a wide range of speeds, which makes it suitable for both low and high speed applications. The memory has a fast access time, allowing data to be located quickly and accurately, making it ideal for data-intensive applications.
To sum up, the S29GL064S90DHVV20 is a robust flash memory that is suitable for a wide range of applications. Its power efficiency, fast read and write cycles, low operating current requirements and error correction features make it reliable and suitable for long-term use. Its wide range of operating temperatures and speeds make it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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