S29GL128N11FFVR20 Allicdata Electronics
Allicdata Part #:

S29GL128N11FFVR20-ND

Manufacturer Part#:

S29GL128N11FFVR20

Price: $ 5.83
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par...
DataSheet: S29GL128N11FFVR20 datasheetS29GL128N11FFVR20 Datasheet/PDF
Quantity: 1000
180 +: $ 5.30225
Stock 1000Can Ship Immediately
$ 5.83
Specifications
Series: GL-N
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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S29GL128N11FFVR20 is a high-speed cell based, non-volatile single-power supply memory device belonging to flash memory family with a large storage capacity in the market. It is widely used in automotive and industrial application fields.

S29GL128N11FFVR20 consists of 128 Mbitor (16Mbyte) of memory. It is organized as 16,777,216 x 8-bit devices, this architecture allows for maximum flexibility for embedded applications. The devices have Common Flash Inter face (CFI) support which provides necessary information about the device to application software. With the CFI direct programming of the devices is possible from the application software.

The S29GL128N11FFVR20 has an erase size of 128K byte and a write size of 32 byte sectors. This device is fast with an access time of 60ns. It has program and erase operations that are limited only by the intrinsic programming and erase times. It is also power efficient with a 5V Operating Voltage Standard and can work with a minimum voltage of 1.8 V.

The working principle of the S29GL128N11FFVR20 is based on the use of transistors to make and break electrical connections. Each transistor is connected to its own control element, which is either a flash cell or an EEPROM cell. The memory cell itself contains a floating gate transistor, which operates when a voltage is applied across it. When a voltage is applied, the control element either turns on or off the transistor, which is then connected to the data bus. This connection between the data bus and the transistor is used to either read data from the memory cell or to write data to the memory cell.

Furthermore, the device is designed to support a wide range of software and hardware commands that facilitate advanced boot code functions and improved data protection. These commands can protect the memory from inadvertent writes and improper erase operations, which can corrupt the data or cause the system to crash.

The device is also incredibly robust and has a long lifespan, with an estimated write endurance of one million cycles and a data retention of ten years. Additionally, it is capable of operating in a wide temperature range, from -55-degree Celsius to 125-degree Celsius, making it suitable for use in extreme conditions.

In conclusion, the S29GL128N11FFVR20 is a reliable and robust memory device that provides high speed performance and power efficiency. It is widely used in automotive and industrial applications and is ideal for any embedded system due to its advanced features.

The specific data is subject to PDF, and the above content is for reference

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