S29GL128S10FAIV10 Allicdata Electronics
Allicdata Part #:

S29GL128S10FAIV10-ND

Manufacturer Part#:

S29GL128S10FAIV10

Price: $ 2.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL 64BGA
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 10...
DataSheet: S29GL128S10FAIV10 datasheetS29GL128S10FAIV10 Datasheet/PDF
Quantity: 1000
180 +: $ 2.32999
Stock 1000Can Ship Immediately
$ 2.56
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (13x11)
Description

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S29GL128S10FAIV10 are a type of Flash memory chip. It is from a range that is specifically designed to meet the needs of embedded systems, which require increased performance and lower cost than the expensive bulk Flash memory on the market. These chips feature low standby power consumption, high reliability and fast access times making them well suited for mission critical applications. This article will discuss the application field and working principle of the S29GL128S10FAIV10 type of flash memory.

Application Field

The S29GL128S10FAIV10 type of flash memory is typically used in embedded systems that require high-speed, cost-effective data storage. These chips are often used in embedded systems such as digital cameras, medical equipment, security systems, and other industrial controls. The low cost and fast access times make this type of memory well suited for these applications. In addition, these chips feature low power consumption, making them suitable for battery operated systems.

The S29GL128S10FAIV10 chips also feature high reliability, which makes them well suited for mission-critical applications. The chip’s built-in error correction code (ECC) ensures data accuracy, reducing the possibility of data corruption. The chip’s built-in wear-leveling algorithm ensures that data is evenly spread across the memory, reducing the possibility of data loss.

The S29GL128S10FAIV10 is also commonly used in automotive applications. The chip’s high speed and low cost make it well suited for automotive systems where data access times and cost savings are important factors. The chip’s low power consumption also makes it suitable for car navigation and entertainment systems.

Working Principle

The S29GL128S10FAIV10 Flash memory chip is a type of non-volatile storage device. Non-volatile storage devices can retain data even when power is removed from the system, eliminating the need for a battery backup. This type of memory is commonly found in embedded systems, where it is used to store critical data.

The S29GL128S10FAIV10 chip is made up of two main parts: a controller and a memory array. The controller is responsible for managing the data stored in the chip, while the memory array stores the actual data. When data is read from or written to the chip, the controller sends commands to the memory array, which contains the actual data bits. The data is then returned back to the controller, where it is processed.

The S29GL128S10FAIV10 Flash memory chips use a sector architecture. A sector is an area of memory that is divided into smaller, equal units, and each sector contains a certain amount of data. Each sector is typically organized into blocks, which are divided into pages. Data is written and erased in units of pages and must be erased before new data can be written onto the same page.

The S29GL128S10FAIV10 chips use two control pins to interface with the external system. The chip select (CS) pin is used to select the chip, while the read/write (R/W) pin is used to determine whether the chip is in read or write mode. When the CS pin is set to high and the R/W pin is set to low, the chip is in read mode. When the CS pin is set to low and the R/W pin is set to high, the chip is in write mode.

The S29GL128S10FAIV10 also features a built-in error correction code (ECC) to ensure data accuracy. The ECC can detect and correct up to eight bit errors per sector. This feature helps to reduce the possibility of data corruption and provides increased reliability for the data stored in the chip.

The S29GL128S10FAIV10 type of flash memory is a popular choice for embedded systems that require high-speed and cost-effective data storage. The chip’s low power consumption, fast access times and high reliability make it well suited for mission-critical applications. The chip’s built-in ECC ensures data accuracy and its sector architecture ensures that data is written and read in equal units. These features make the S29GL128S10FAIV10 a reliable solution for embedded systems.

The specific data is subject to PDF, and the above content is for reference

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