S29GL128S10FHI020 Allicdata Electronics
Allicdata Part #:

S29GL128S10FHI020-ND

Manufacturer Part#:

S29GL128S10FHI020

Price: $ 2.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL 64BGA
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 10...
DataSheet: S29GL128S10FHI020 datasheetS29GL128S10FHI020 Datasheet/PDF
Quantity: 1000
180 +: $ 2.32999
Stock 1000Can Ship Immediately
$ 2.56
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (13x11)
Description

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S29GL128S10FHI020 Memory Application Field and Working Principle

The S29GL128S10FHI020 is a 128Mbit CMOS synchronous Flash Memory. It operates from a 1.8V, but also supports a 3V voltage input. This memory is compatible with the single power Flash Memories in the market, and supports asynchronous and page data read modes, making it a low-power consumption design ideal for a variety of embedded applications.

Application Field:
  • Handheld communication devices, e.g. PDA, mobile phones and GPS navigation.
  • USB-type storage devices.
  • Office equipment and printers.
  • Industrial, medical and instrumentation applications.
  • Digital consumer electronics, e.g. digital cameras and audio players.
  • Automotive ECU.
Working Principle:

The S29GL128S10FHI020 is a high-performance, low-power memory that stores data in array of individual memory cells organized into pages and blocks. The device contains 128 million bits (or 16 million bytes) of non - volatile memory organized as pages of 256 Bytes for data access. The device is organized in blocks of 32K bytes. The data is organized in separate 16-bit wide words.

The S29GL128S10FHI020 supports one time programmable (OTP) memory, where bits can only be programmed from a 1 to a 0 state. It also supports Read ID, single page programming, random data input/output and block erase while providing single voltage program and erase operations.

The memory can erase/program with Page Erase, Subsection Erase and Block Erase capability allowing cost effective data updating with minimum overhead. An erase of the entire chip can be done in less than a few seconds. The single power Flash technology also allows for data retention for 10 years.

The device also implements a hardware data protection mechanism, which can secure the user data from being erased or programmed during power-off operation. The data protection mechanism is an elite protection feature that ensures the data is unharmed during power cuts.

The S29GL128S10FHI020 is offered in 48-pin TSOP and 44-ball TFBGA packages. This provides a higher level of performance, security and reliability at a cost that is ideal for specific application markets.

The specific data is subject to PDF, and the above content is for reference

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