S29GL128S11DHIV10 Allicdata Electronics
Allicdata Part #:

S29GL128S11DHIV10-ND

Manufacturer Part#:

S29GL128S11DHIV10

Price: $ 2.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL 64FBGA
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 11...
DataSheet: S29GL128S11DHIV10 datasheetS29GL128S11DHIV10 Datasheet/PDF
Quantity: 1000
260 +: $ 2.32131
Stock 1000Can Ship Immediately
$ 2.56
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)
Description

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S29GL128S11DHIV10, part of the GL-S family from Microchip, is a high-density CMOS Flash Memory with a width of 128 megabits. It can store up to 128 megabytes and provide highly efficient memory capacity management capabilities, making it a popular choice for application fields requiring large amounts of data processing. Moreover, its low voltage operation allows the device to be used in cost-sensitive mobile, handheld, and portable devices.

As a nonvolatile memory, S29GL128S11DHIV10 is one of the best choices for embedded system applications. It provides exceptional reliability with very low power consumption, facilitating critical system level tasks, such as memory initialization and data logging. Additionally, this memory also features critical write-protection capabilities to ensure data security during power outages.

The S29GL128S11DHIV10 is compatible with a variety of bus architectures, such as Intel x8 and Harwood. It also supports a wide range of power supplies, ranging from 1.8V to 5.3V. Its flexibility and robust nature make it an ideal choice for many portable and wearable electronic devices, including navigation systems, gaming consoles, and remote-control devices.

As for the working principles of the S29GL128S11DHIV10, the device comprises a single die comprised of two memory blocks. The first block is composed of 4096 non-volatile Flash cells and an array of sector registers. The second block contains a page buffer, page address registers, and block registers. The memory blocks are connected to a control module, which consist of both software and hardware components. Through an on-chip controller, the device can communicate with an external host processor, allowing data to be retrieved and stored within the device.

In order to perform an operation, the control module accesses a sector register, which then indicates which portion of the Flash cell array is being accessed. This information is then used to configure the internal block registers and address registers. Data is transferred between the memory blocks and the external processor by way of the address registers. Once the desired sectors are programmed, the machine can then be reset and the process will repeat itself.

The S29GL128S11DHIV10 is a highly reliable and versatile memory device with wide application fields. Its low power consumption and robust communication interface allow it to be used in a variety of portable and wearable electronic devices. Moreover, its simple and efficient working principle enables it to quickly and accurately process data, making it a great choice for applications that require high levels of data integrity.

The specific data is subject to PDF, and the above content is for reference

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