S29GL128S90TFA010 Allicdata Electronics
Allicdata Part #:

S29GL128S90TFA010-ND

Manufacturer Part#:

S29GL128S90TFA010

Price: $ 3.17
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 90...
DataSheet: S29GL128S90TFA010 datasheetS29GL128S90TFA010 Datasheet/PDF
Quantity: 1000
182 +: $ 2.87755
Stock 1000Can Ship Immediately
$ 3.17
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP
Description

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S29GL128S90TFA010 application field and working principle

S29GL128S90TFA010 is a NAND Flash memory designed by Spansion Inc., classified as non-volatile memory, which is based on NOR Flash and has similar structure and characteristics, but different from NOR Flash in that it has a larger storage capacity and better data safety. The memory belongs to Spansion\'s family of SSRAM products and is commonly used in a variety of applications, such as automotive, industrial and commercial applications, video and audio applications, computer peripherals, USB Flash drives, digital cameras and other applications.

In terms of structure, the S29GL128S90TFA010 memory package consists of a central array and peripheral logic. Both logic and array are isolated from each other to prevent interference. The array consists of an array of memory cells that store data. The array size can be 4 Mbit, 8 Mbit, 16 Mbit, 32 Mbit and 64 Mbit, etc. The peripheral logic is used for address decoding, data buffering, control, sensing and other functions, as well as for outputting data contained in the memory array for external storage.

In terms of working principle, S29GL128S90TFA010 is a NAND non-volatile memory and consists of two transistors and four resistors connected in an "NAND" or "AND/OR" logic circuit. As shown in the diagram above, this memory is fabricated using CMOS (complementary MOS) implementation technology. The transistors generate a voltage drop which is stored in the resistors, thus forming a parallel resistance circuit structure. When a voltage is applied across the memory, the data can be stored in the resistors, and when the voltage is removed, the data will not be lost.

The S29GL128S90TFA010 is compatible with the industry NAND Flash standard and supports both small-page and large-page programming operations. In terms of power consumption, the S29GL128S90TFA010 can reduce power consumption by up to 70% in active mode, making it highly suitable for power sensitive applications. In addition, the device also supports onboard Error Correction Code (ECC) to ensure accurate, reliable feature data reading and writing.

In conclusion, S29GL128S90TFA010 is a high-performance, high-reliability NAND Flash memory suitable for a variety of applications, including automotive, industrial and commercial applications, video and audio applications, computer peripherals, USB Flash drives, digital cameras and other applications. It provides excellent data safety, large storage capacity and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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