S29GL256N11TFA013 Allicdata Electronics
Allicdata Part #:

S29GL256N11TFA013-ND

Manufacturer Part#:

S29GL256N11TFA013

Price: $ 4.87
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 256M PARALLEL
More Detail: FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa...
DataSheet: S29GL256N11TFA013 datasheetS29GL256N11TFA013 Datasheet/PDF
Quantity: 1000
1000 +: $ 4.42090
Stock 1000Can Ship Immediately
$ 4.87
Specifications
Series: Automotive, AEC-Q100, GL-N
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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S29GL256N11TFA013 is a type of non-volatile flash memory, it is designed for applications requiring large memory capacities and fast erase/program times. S29GL256N11TFA013 has low power consumption and is highly reliable, making it an excellent choice for embedded system applications.

Application Field of S29GL256N11TFA013

S29GL256N11TFA013 can be used in a variety of applications, including digital electronics and consumer devices like digital cameras and mobile phones. It can also be used in computer systems, such as the memory chips in computer machines and servers used for data storage and retrieval. In addition, S29GL256N11TFA013 is also used in automotive and industrial automation sectors, with applications including car navigation systems, industrial controllers, and various custom solutions.

Working Principle of S29GL256N11TFA013

S29GL256N11TFA013 works by utilizing an array of electrically erasable and programmable nonvolatile flash cells. To read data, a memory control signal is sent to the cells by the control unit, and the data stored in the cell is sent back to the control unit for processing. To write data, a similar signal is sent from the control unit to the cells to store the data onto the flash cell.

In order to erase data, a signal is sent from the control unit to the cells, which reverses the electrical charge of the cells and deletes the stored data. This process is typically done quickly and accurately, allowing for fast erase and program times.

The control unit is also responsible for managing the overall operation of the S29GL256N11TFA013. It is typically responsible for resetting the cells and carrying out various operations such as reading, writing, and erasing data. The control unit can also be used to set data protection levels, which can be used to control access to the memory.

S29GL256N11TFA013 has a wide variety of applications due to its low power consumption, reliability, and fast erasing and programming times. By combining its features with its advanced architecture, it is an excellent choice for embedded systems applications.

The specific data is subject to PDF, and the above content is for reference

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