| Allicdata Part #: | S29GL256S10DHAV10-ND |
| Manufacturer Part#: |
S29GL256S10DHAV10 |
| Price: | $ 3.10 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC FLASH 256M PARALLEL 64BGA |
| More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 1... |
| DataSheet: | S29GL256S10DHAV10 Datasheet/PDF |
| Quantity: | 1000 |
| 260 +: | $ 2.81469 |
| Series: | GL-S |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 256Mb (16M x 16) |
| Write Cycle Time - Word, Page: | 60ns |
| Access Time: | 100ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.65 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 64-LBGA |
| Supplier Device Package: | 64-Fortified BGA (9x9) |
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S29GL256S10DHAV10 is a type of memory and is commonly referred to as static random-access memory (SRAM) because it does not need to be periodically refreshed. This memory module is widely used in embedded systems such as industrial, military, and medical applications that require high performance and reliability.
The S29GL256S10DHAV10 operates using the basic principles of SRAM. It consists of an array of memory cells each containing several transistors and capacitors. When a voltage is supplied to the cells, the capacitors charge and hold a "high" or "low" voltage level, depending on the type of logic being used. This voltage level represents a 1 or 0 in memory, known as a "bit" of data.
Each single S29GL256S10DHAV10 memory module has 256M addressable locations and each location is 32 bits wide, giving a total capacity of 8GB. The memory runs at an access speed of 195ns, providing high performance operation. It also has an operational voltage range of 3.135 V to 3.475 V and can stand up to 15,000 erase/write cycles.
The S29GL256S10DHAV10 has been designed to meet the needs of embedded applications that require reliability and high performance. It is typically used in applications such as industrial control systems, computer-controlled automation, medical imaging, automotive and communication systems. The memory is reliable due to the use of sophisticated ECC (error correction code) logic that corrects single-bit errors and detects multiple-bit errors. This allows the memory to operate in a range of temperature, voltage and environmental conditions, making it suitable for a variety of system designs.
The S29GL256S10DHAV10 is available in a variety of packages including surface mount, SOIC and BGA, which enables it to fit in a wide range of system designs. It also offers the flexibility of being able to be used not only as ROM (read-only memory) but also as RAM (random-access memory). This makes it suitable for a wide range of applications.
In conclusion, the S29GL256S10DHAV10 is a reliable, high performance memory module designed to meet the needs of embedded systems requiring reliability and performance. It is suitable for a wide range of applications because of its high performance, flexibility and reliability.
The specific data is subject to PDF, and the above content is for reference
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S29GL256S10DHAV10 Datasheet/PDF