Allicdata Part #: | 428-4197-ND |
Manufacturer Part#: |
S29GL256S10TFI020 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 256M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 1... |
DataSheet: | S29GL256S10TFI020 Datasheet/PDF |
Quantity: | 70 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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Memory is an essential component of many electronic devices, and S29GL256S10TFI020 is a particular type of memory device used in a range of applications. This article will provide an overview of the device’s application field and working principle.
S29GL256S10TFI020 is a 256Mb low-voltage synchronous single-power-supply flash memory with a 10-year data retention, 75ns random access time, and program/erase cycles of 1M. It is designed to be compatible with major microcontrollers and provides a great storage solution. It is also energy efficient and features features both I/O and pin-compatible options, allowing it to be used in a variety of applications.
The device’s application field is as broad as its capabilities. It is used in a range of industries, such as aerospace, automotive, consumer electronics, industrial, medical, and communications. It is typically used for embedded applications, including firmware updates for these sectors, though it can also be used for general-purpose storage. The device’s power efficiency, long data retention, and 1M program/erase cycles make it ideal for these applications.
The device’s working principle is based on a standard asynchronous NOR flash architecture. The architecture consists of a NOR flash memory array, containing both the physical memory and the external interface, and a control area to manage the commands given by the external microcontroller, plus another array containing the E-fuse bits to personalize the memory. This structure is connected with an SPI like protocol, allowing for a high performance data flow.
The architecture also incorporates an algorithm for storing data in the flash blocks. These blocks are composed of individual memory cells and using a complex algorithm the address bus commands a combination of several bits, corresponding to the cells inside the selected blocks in order to store or access the desired information.
In addition to the device’s NOR architecture, it also utilizes an advanced error-correction code (ECC) for improved data integrity and accuracy of stored information. The device uses a parity check algorithm, which combines bits within the flash block with parity bits stored in the control area in order to ensure reliable data storage. This ECC also helps reduce power consumption while increasing data transfer speeds.
The combination of a NOR flash architecture, advanced ECC technology, and the device’s low power consumption makes the S29GL256S10TFI020 ideal for a wide range of applications. Its versatility and energy efficiency make it a great choice for embedded applications, while its high data transfer speeds and long data retention make it a great storage solution.
The specific data is subject to PDF, and the above content is for reference
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