S29GL512N11FFA023

The S29GL512N11FFA023 is a 512-Mbit (32Mx16), 3.3V CMOS flash memory which features a low-power read access time of 45ns, fast erase and program time, a uniform 64-Kbyte block architecture for ease of management, a 32-bit-wide data bus for high performance, and a suspend mode for leakage current reduction when system/bus activity is stopped. It is manufactured using advanced 0.16 micron CMOS Flash technology and has erase/program erasability of 100,000 cycles (min), making the S29GL512N11FFA023 a viable memory solution for applications ranging from consumer to automotive.

Application Field

The S29GL512N11FFA023 is ideal for applications such as cellular phones, digital cameras, PDAs, personal computers, electronic toys and games, electronic organizers and hand-held instrumentation. It provides a high-density, cost-effective solution for applications where multiple code/system updates and frequent configuration changes are desired. The S29GL512N11FFA023 offers low power standby mode, fast access times and easy programming and erase.

Working Principle

The S29GL512N11FFA023 uses a method called a floating-gate process, which traps electrons in a gate oxide dielectric material. Through the application of various voltages, the electrons can be made to flow between the source, drain and the floating gate. By the use of this voltage control, a transistor within the device can be turned on which sets a logic state. This logic state is then written to the memory cell and retained using an electrical charge.

The programming and erasing of the S29GL512N11FFA023 is done through the use of specific commands. The programming operations take advantage of a special Boost Voltage Generator that allows for a high erase/program voltage. This allows for faster programming, higher throughput and more endurance than conventional memories. When the device is in the READ mode, a typical 10 ns access time is achieved. In the SUSPEND mode, standby current is reduced and device temperature can be managed more effectively.

The S29GL512N11FFA023 provides both backup and code warming techniques. During a power failure, the device will maintain part of the code so there is no need to reprogram it after power is restored. Code warming techniques enable faster access times as the device learns and memorizes the code used most frequently.

In summary, the S29GL512N11FFA023 is an ideal memory solution for applications where high-density, low-power operation, fast program/erase operations and code warming capabilities are desired. Its uniform 64K byte block architecture ensures ease of management and its suspend mode enables the device to conserve power when system/bus activity is stopped. The S29GL512N11FFA023 is suitable for applications ranging from consumer to automotive, making it an effective and reliable memory choice.