S29GL512S11DHIV23 Integrated Circuits (ICs)

Memory:S29GL512S11DHIV23 Application Field and Working Principle

S29GL512S11DHIV23 is a low-voltage and high-performance NOR Flash memory, based on S29GL064P/S29GL128P series products for a cost-effective upgrade. The memory has 5V/3V/1.8V Vcc supply options and multiple package options, with the convenience and power reduction, it is widely used in the automotive, industrial, consumer and low voltage application.

Application Field of S29GL512S11DHIV23

The most common application of S29GL512S11DHIV23 includes industrial and network systems, automotive applications, general consumer products, and anywhere requires flash memory. This memory can be used as a storage medium for programs, data, graphics, and other media.

• Industrial and Network Systems
  • S29GL512S11DHIV23 is a cost-effective flash memory designed for industrial applications, and has the advantages of low cost and low power consumption. It has a wide range of operating temperatures up to 105 °C, and the industrial temperature grade of the product can go up to -40°C to +85°C.
  • In addition, S29GL512S11DHIV23 also supports emergency power fail protection. At the time of power-off, the data of the memory will not be damaged. This feature is suitable for network application systems.
• Automotive Applications
  • S29GL512S11DHIV23 has a built-in ECC algorithm for increased data reliability. It also has a low power consumption, which is suitable for automotive applications, such as security systems and engine control units.
  • Compared with other NOR Flash products, S29GL512S11DHIV23 offers a wide temperature range from -40 °C to +105 °C. This ensures a glimpse of operation, especially when operating in extreme temperatures, without any data loss.
• General Consumer Electronics
  • S29GL512S11DHIV23 is a Flash memory which can be used in consumer electronics. The memory offers an wide temperature range and a variety of speed packages. It offers a cost effective solution; it also supports the features of 3V, 5V and 1.8V operation and feature power-saving, making it ideal for consumer devices.

S29GL512S11DHIV23 Work Principle

S29GL512S11DHIV23 is based on the 0.18um CMOS technology and provides 1.8 V, 2.7 V, 3.0 V, 3.3 V, 5.0 V voltage range. The memory device integrates programmable electronic pulse width into the chip, which can reduce the cost of external components and reduce the overall cost of the system.

The S29GL512S11DHIV23 offers the uniform 8/16/32/64/128/256/512 megabit flash memory components and can provide uniform 64k-byte page programming capability. Its built-in block protect structure provides more memory security and prevents accidental data modification and forced erasure.

The S29GL512S11DHIV23 need a two-stage flash programming process, including erase and program cycle. The memory can run at speeds up to 50 MHz and supports multiple clock frequencies, such as 15 MHz, 30 MHz, 50 MHz, 55 MHz, 66 MHz and 80 MHz. This makes the S29GL512S11DHIV23 an ideal choice for applications that require high performance.

The S29GL512S11DHIV23 has a small commands set and requires only three commands, including the program, the erase, and the sector-program, which is suitable for high performance applications. Furthermore, it has also built-in mechanisms preventing accidental address corruption which without slowing down the overall access time.