S29GL512S12TFIV10

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S29GL512S12TFIV10 is a type of memory, typically an Electrically Erasable Programmable Read-Only Memory (EEPROM). It is part of the advanced, very dense S29GL family of Flash memories, providing a storage capacity of 512 Megabits (64 Megabytes) and an access speed of 83.3ns, making it one of the fastest memories available. It is also designed for low power consumption and is well-suited for industrial and automotive applications.

S29GL512S12TFIV10 may be used in a wide range of applications, including automotive displays, infotainment systems, medical equipment, industrial control and automation systems, military applications, mobile devices and other data intensive applications. In addition, it can be used to store sensitive information or programs in a secure environment.

The S29GL512S12TFIV10 has several features that make it an attractive option for a variety of applications. First, it uses a 3V power supply and offers a high-speed operating frequency of 83.3ns. Second, it features on-chip erase and programming, reducing total write time while eliminating the need for an erase algorithm. Third, it offers one of the highest levels of data retention and reliability in its class. Finally, it is designed for low power consumption, with only 0.2mA required for reading and 1mA for writing.

The working principle behind the S29GL512S12TFIV10 memory is fairly simple. It uses two primary technologies: charge storage cells for data storage and Fowler-Nordheim tunneling for data erasing and programming. Charge storage cells are essentially capacitors, which store electrical energy for a certain amount of time. This energy is used to store digital bits as a one or a zero. Fowler-Nordheim tunneling is a process by which electrons from a control gate are tunneled through a thin dielectric barrier to erase or program a memory cell.

To write or erase a bit of data in a cell, the Fowler-Nordheim tunneling process is used. This process involves the application of an electric field to the cell to cause a tunneling current between the cell and the gate. In the case of an “erase” operation, the electrons are removed from the cell to reset a data bit to zero. When writing data, electrons are injected into the cell to set the data bit to one. The process is repeated for each bit of data stored in the memory, creating the desired result. The process is fast, reliable and durable, even when subjected to extreme temperatures and voltages.

In conclusion, the S29GL512S12TFIV10 is a versatile and reliable type of memory, offering high performance and low power consumption. Its advanced circuitry and 3V power supply allow for fast operation and efficient data retention. As such, it is an ideal choice for automotive applications as well as other data-intensive applications. With its low power consumption and efficient data-storage technology, the S29GL512S12TFIV10 is an attractive option for those looking for a dependable and versatile memory solution.

The specific data is subject to PDF, and the above content is for reference