S29GL512T10TFI043

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The S29GL512T10TFI043 belongs to the category of Memory, specifically embedded Flash Memory which is designed for storing code, data, etc. embedded applications. The S29GL512T10TFI043 consists of 512M bits of memory array and are available in 256 and 512M word configurations. The device die is in the industry-standard VFBGA-144 package and is based on the SuperFlash™ Technology from Spansion.

The S29GL512T10TFI043 embedded flash memory is dedicated to support high performance and reliability requirements of embedded applications. The S29GL512T10TFI043 can be programmed at high speed using the AFT (Advanced Flash Technology) backed by the Spansion Super Flash™ technology. It has low power consumption, low standby current leakage, and automatic sleep mode. Program/erase suspend function allows safe programming and a guaranteed minimum erase time.

The main application field of the S29GL512T10TFI043 is consumer electronics, handheld electronics, the automotive industry and industrial machines, among others. It is ideal for applications requiring high data throughput such as image processing, multimedia, communications and computing. It also provides efficient support for tasks such as data logging, program code versus data definition, system booting, parameter programming and content protection.

The working principle of the S29GL512T10TFI043 embedded flash memory is based on the standard EEPROM cell with tunnel oxide and floating gate technology. Program and erase operations are performed by controlling the tunnel oxide thickness, resulting in an accumulation or depletion of electrons in the floating gate. Program and erase operations are achieved using Fowler-Nordheim (FN) tunneling. FN tunneling is based on quantum mechanical tunneling effect of electrons in narrow channel through a barrier. A higher electric field intensity accelerates the electrons and carries them through the high resistance oxide layer, resulting in a reduction of the oxide tunneling barrier thickness and the release or accumulaton of electrons in the floating gate.

As a result, data is stored in the cell by a buildup or draining of electrons from the floating gate, electrically controlling its available storage charge. Performing a program or an erase operation on an EEPROM cell causes charge to accumulate or deplete in the floating gate. All the erase operations are done using block erase algorithm, which reduces die size and simplifies architecture design.

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