S29GL512T11FAIV20

Series:	GL-T
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (64M x 8)
Write Cycle Time - Word, Page:	60ns
Access Time:	110ns
Memory Interface:	Parallel
Voltage - Supply:	1.65 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)

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S29GL512T11FAIV20 Memory

S29GL512T11FAIV20 Non-volatile Memory (NVM) devices, designed for automotive and industrial applications, are the latest in a series of industry-leading memory solutions from Cypress Semiconductor. The devices are pressure-tolerant and temperature-tolerant, and come in two variants: a standard 512 Megabit (Mb) version and a high-density 1 Gigabit (Gb) version. The S29GL512T11FAIV20 memory is available in both a 54-ball molded ball grid array (BGA) and a 32-lead dual-in-line package (DIP).

Application Fields of S29GL512T11FAIV20 Memory

The S29GL512T11FAIV20 memory is ideal for automotive systems and industrial applications, such as in-cabin entertainment systems, instrumentation control, and automation systems. Automotive applications are especially suited for this NVM device, due to its high-temperature tolerance and pressure tolerance. It can operate in temperatures ranging from -40°C to +85°C, saving automotive developers from the expense and complexity of using multiple devices for different temperatures.The S29GL512T11FAIV20 memory also makes an ideal choice for industrial applications such as factory automation or packaged goods tracking. The device is capable of withstanding temperature ranges from -40°C to +105°C and humidity levels up to 95%, making it a great choice for conditions that are too harsh for traditional memory devices.

Working Principle of S29GL512T11FAIV20 Memory

The working principle of the S29GL512T11FAIV20 memory is based on a unique non-volatile memory (NVM) technology developed by Cypress Semiconductor. It is a ferroelectric NVM technology that uses non-volatile ferroelectric random access memory (FERRAM) cells to store data.Each FERRAM cell consists of a ferroelectric layer sandwiched between a pair of electrodes. When an electric field is applied to the cell, it stores a “1” or a “0”, based on the polarity of the electric field. The data is retained in the cell even when power is removed.The S29GL512T11FAIV20 memory takes advantage of the cell\'s non-volatility to provide reliable data storage in automotive and industrial applications. The device is capable of withstanding temperatures ranging from -40°C to +105°C, enabling the use of this memory in harsh environments where the reliability of data storage is critical.The device is protected against accidental erasure and programming with an integrated hardware write protection circuitry, which ensures that data is not lost during power interruptions. It also features software write protection, which prevents accidental write access to sectors of memory.

Conclusion

The S29GL512T11FAIV20 memory from Cypress Semiconductor is an ideal solution for automotive and industrial applications, due to its pressure-tolerance and temperature-tolerance. It is capable of withstanding temperatures from -40°C up to +105°C, making it suitable for extreme environments. The device features a unique ferroelectric NVM technology that allows for reliable data storage, and offers software and hardware write protection to ensure that data is not lost during power interruptions. It comes in two variants: a standard 512 Megabit (Mb) version and a high-density 1 Gigabit (Gb) version.

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